Enterprise E1.S PCIe SSD


The N5200 Gen4 PCIe E1.S SSD is optimized to serve the need for increasingly evolved storage for enterprise and edge data centers. The high performance SSD delivers a low KIOPS/watt performance while supporting excellent Quality of Service (QoS). Furthermore, the N5200 supports a wide range of features for modern enterprise data centers, including hardware-based security, advanced telemetry, data path and power failure protection. This make it an ideal choice for high-performance and mission-critical applications where reliability, durability, and scalability are essential.

Series Name

N5200 E1.S

Standard & Interface

PCIe Gen 4.0 / NVMe 1.4, x4 lanes

Package

E1.S

Connector

SFF-TA-1006 E1.S

Outline Dimensions (L x W x H)

111.25mm x 33.7mm x max. 5.5/9.5/15mm

Flash Type

3D NAND eTLC

Density Range

1.92 TB, 3.84 TB, 7.68 TB

Endurance [DWPD]
Enterprise Workload

> 1.0 for 5 years

Operating Temperature

0°C to +70°C

Storage Temperature

-40°C to +85°C

Performance

Sequential data rates of up to 6,900 MB/s read and 4,200 MB/s write (sustained)


Random data rates up to 1,350 KIOPS read and 190 KIOPS write (sustained)

Voltage

VCC: 12V (+/-10%)

Average Power
Mixed Rd/Wr

14.5 W

DRAM

DDR4 DRAM

MTBF

> 2,500,000 hours

Data Reliability

< 1 sector per 10^17 bits

Features & Tools

OCP NVMe Cloud SSD Specification 1.0 support
Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T., Telemetry)
T10 DIF/DIX Vital Product Data (VPD) over SMBus Supported
Security and encryption: TCG OPAL 2.01 / AES256
Secure Boot
Crypto Erase
ECDSA-256 FW Image Authentication Supported
End to end path protection
NVMe Management Interface Basic Management Command
Multi-namespace support up to 128
Powersafe power fail protection

M.2 PCIe SSD


The PCIe interface with NVMe protocol has become the new standard for consumer, enterprise and embedded applications. Although all three use the same SSD architecture, the individual requirements differ significantly. While high capacity and speed are most important for client and enterprise applications and are addressed by the market, the resulting heat generation poses a huge challenge to embedded applications.

The necessity to adopt the new interface standard while still just requiring small capacities ask for dedicates products. Immunity against data loss at power fail is a strong requirement for embedded and enterprise applications.

For industrial and embedded markets Swissbit addresses these different needs with the N-20m2/N2000 with HMB support, low power consumption and small form factors, and with the high performance N3002 and N-30m2 with powersafe™ hardware power fail protection. They feature thermal and data care management and various security options. Both series are also available in pSLC variants with highly increased endurance. The N3202 powersafe™ is optimized for NetCom and enterprise applications that require enterprise grade endurance with a strong Swissbit typical value set.

Series Name

N-20m2 / N-26m2
N2000 / N2600

N-30m2 (P) / N-36m2 P

N3000

N3002 / N3602

N3202

Standard & Interface

PCIe 3.1 / NVMe 1.3
x4 lanes

PCIe 3.1 / NVMe 1.4
x4 lanes

PCIe 4.0 / NVMe 1.4
x4 lanes

Package

PCIe M.2
(2280 to 2230)

PCIe M.2
(2280, 2242)

PCIe M.2
(2280, 2242)

PCIe M.2
(2280)

Connector

75 pos. Edge Connector
M key

Outline Dimensions

80, 42, 30 x 22 x 3.5 mm 80, 42 x 22 x 3.58 mm 80 x 22 x 3.58 mm

Flash Type

3D NAND TLC / 3D NAND pSLC

high endurance
3D NAND TLC

Density Range

TLC: 15 GB - 480 GB
pSLC: 5 GB - 160 GB

TLC: 240 GB – 3,840 GB
pSLC: 80 GB – 320 GB
TLC: 240 GB – 3,840 GB
pSLC: 80 GB – 320 GB
TLC: 240 GB – 3,840 GB

Data Retention

10 years @ life begin
1 year @ life end

3 years @ life begin
4 months @ life end

Endurance [DWPD]

N-2x:   max. 1.8 / 54
N2x00: max. 2.2 / 78

max. 3 / 36

max 1.34

max 1.34 / tbd

max 1.5 DWPD
at Enterprise WL

Operating Temperature

N-2x:
Commercial: 0°C to +70°C
Industrial: -40°C to +85°C

N2x00 only Industrial

Industrial: -40°C to +85°C

Commercial: 0°C to +70°C

Storage Temperature

-40°C to +85°C

Performance

Sequential Read (MB/s)
Sequential Write (MB/s)
Random 4KB Read (IOPS)
Random 4KB Write (IOPS)

 

up to 1,775 / 1,780
up to 860 / 870
up to 140,000 / 140,000
up to 134,000 / 136,000

 

up to 3,500 / 3,500
up to 3,100 / 3,000
up to 490,000 / 380,000
up to 520,000 / 540,000

 

up to 3,850 / 3,850
up to 3,360 / 3,360
up to 461,300 / 461,300
up to 380,000 / 380,000

 

up to 3,850
up to 3,360
up to 461,300
up to 380,000

Voltage

VCC: 2.70 – 3.60

DRAM

HMB support

DRAM support
HW powersafe™ on 2280 (P)

DRAM support

DRAM support
HW powersafe™

Features & Tools Active and Passive Data Care Management
AES 256 / E2E Data Path Protection
FW Power Fail Data Loss Protection
Active State Power Management (ASPM) Support
TCG OPAL 2.0
Swissbit Device Manager (SBDM) Tool and SDK for SBDM(on request)

Features

Data care management
Data Care Management

Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.

Longevity
Longevity

The longevity product lines use special components with a long-term supply commitment of up to 10 years. These products offer lowest TCO in demanding applications with high requalification cost.

Power Fail Protection & Recovery
Power fail protection

Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.

Power Fail Protection
Power fail protection PLUS

Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.

Read-only optimized
Read-only optimized

In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.

Shock & Vibration
Shock and vibration

Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.

Temperature sensor
Temperature sensor

The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.

TRIM support
Trim support

The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.

Write Amplification Factor
WAF reduction

The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.

Wear leveling
Wear leveling

Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.

Wide temperature support
Wide temperature support

Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).