Although SATA is still a dominant interface in embedded and NetCom systems, the future belongs to PCIe. PCIe breaks the bandwidth limitations of SATA and offers flexible solutions with multiple lanes that can be combined.

An important innovation to increase the performance is the new protocol NVMe, which has been designed specifically for Non Volatile Memory. It reduces significantly the latency of read and write requests by using more efficient commands.

With higher performance also comes higher power consumption, especially with the common 4-lane configuration.

The Swissbit N-10m2 module, a PCIe Gen3 / NVMe 1.2 module, only uses 2 PCIe lanes and reduces the power consumption without sacrificing performance. Even if only operated with one single PCIe lane, the performance still exceeds the SATA limits.
For high endurance requirements the N-10m2 is also available in pSLC versions with N-16m2 series name. They deliver more than tenfold TWB values.

The new N-20m2 is a robust and low power solution for PCIe Gen3.1 / NVMe 1.3 and 4 lanes. It supports Host Memory Buffer operation and delivers high performance.
The product comes in a small M.2 2230 format for small systems and in standard 2242 and 2280 sizes.  Also for the N-20m2 there is a pSLC version available: N-26m2.

Series Name

N-10m2 / N-16m2

N-20m2 / N-26m2

Standard & Interface

PCIe 3.1 / NVMe 1.2, x2 lanes

PCIe 3.1 / NVMe 1.3, x4 lanes


PCIe M.2 (2280)

PCIe M.2 (22110 to 2230)


75 pos. Edge Connector

B & M key

75 pos. Edge Connector

M key

Outline Dimensions

80 x 22 x 2.23 mm 80,42,30 x 22 x 3.5 mm
110,60 x 22 x 3.5 mm on request

Flash Type


Density Range

120 GB - 960 GB / 40 GB - 320 GB

15 GB - 480 GB / 5 GB - 160 GB

Data Retention

10 years @ life begin

1 year @ life end

Endurance [DWPD]

max 2.17 / 23.9

max. 0.6 / 6.0

Operating Temperature

Commercial: 0°C to +70°C /  Industrial: -40°C to +85°C

Storage Temperature

-40°C to +85°C


Sequential Read (MB/s)

Sequential Write (MB/s)

Random 4KB Read (IOPS)

Random 4KB Write (IOPS)


up to 1,600 / 1,600

up to 1,000 / 1,050

up to 190,000 / 190,000

up to 190,000 / 190,000


up to 1,750 / 1,750

up to 720 / 720

up to 140,000 / 140,000

up to 100,000 / 100,000


VCC: 2.70 – 3.60

Power Consumption

Max. Read Active: 4.4 W
Max. Write Active: 3.5 W
Power State 3: < 500 mW

Typ. Read: 3.0 W
Typ. Write: 2.4 W
Power State 3: < 480 mW


DRAM supported FTP

HMB support

Features & Tools Active and Passive Data Care Management
AES 256 / E2E Data protection
Power Fail Data Loss Protection
Active State Power Management (ASPM) Support
NVMe Security Command Support
In-Field Firmware Update
Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T.)
TCG OPAL 2.0 (on request for N-10m2 and N-20m2)
Swissbit Life Time Monitoring (SBLTM) Tool and SDK for SBLTM (on request)
Data care management
Data Care Management

Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.

Life Time Monitoring (LTM)
Life time monitoring (LTM)

The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.

Power Fail Protection & Recovery
Power fail protection

Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.

Read-only optimized
Read-only optimized

In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.

Secure erase
Secure erase (Sanitize / Purge) / Fast erase

This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.

Shock & Vibration
Shock and vibration

Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.

Temperature sensor
Temperature sensor

The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.

TRIM support
Trim support

The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.

Write Amplification Factor
WAF reduction

The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.

Wear leveling
Wear leveling

Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.

Wide temperature support
Wide temperature support

Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).