Enterprise E1.S PCIe SSD
D2200 E1.S
- Enterprise SSD E1.S (9.5mm)
- Compliant to PCIe Gen 5 x4 lanes, NVMe 2.0b interface
- User density 7.68TB and 15.4 TB
- Sequential data rates of up to 14,000 MB/s read and 10,000 MB/s write (sustained)
- Random data rates up to 2.600 kIOPS read and 510 kIOPS write (sustained)
- High endurance 1.5 DWPD, JEDEC enterprise workload over 5 years lifetime
- Multi-namespace support up to 128, EUI64/NGUID
- Powersafe: power fail protection
- Security and encryption: AES-XTS 256, Crypto Erase, Secure Boot
N5200 E1.S
- Enterprise SSD U.2 (15mm) and E1.S (5.9mm/9.5mm/15mm enclosures available)
- Compliant to PCIe Gen 4x4 lanes, NVMe 1.4 interface
- User density 1.92TB, 3.84TB and 7.68TB
- Sequential data rates of up to 7,100 MB/s read and 4,200 MB/s write (sustained)
- Random data rates up to 1,150 kIOPS read and 950 kIOPS write (sustained)
- High endurance 1.5 DWPD, JEDEC enterprise workload over 5 years lifetime
- Multi-namespace support up to 128
- Powersafe: power fail protection
- Security and encryption: TCG OPAL 2.01 / AES256
The Gen 5 PCIe family D2200 is engineered for superior performance and reliability in data centers and enterprise environments. The D2200 sets a new standard for next generation connectivity, providing the best IOPS/watt performance, low latency and cutting-edge safety and security features. Backend by our commitment to exceptional customer service, we ensure seamless integration and direct support for your business needs. Experience the future of connectivity with the D2200 solution, tailored to meet the demands of high-performance applications and enabling your business to thrive in today’s rapidly evolving digital landscape.
The N5200 Gen4 PCIe E1.S SSD is optimized to serve the need for increasingly evolved storage for enterprise and edge data centers. The high performance SSD delivers a low KIOPS/watt performance while supporting excellent Quality of Service (QoS). Furthermore, the N5200 supports a wide range of features for modern enterprise data centers, including hardware-based security, advanced telemetry, data path and power failure protection. This make it an ideal choice for high-performance and mission-critical applications where reliability, durability, and scalability are essential.
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Series Name |
D2200 E1.S |
N5200 E1.S |
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Standard & Interface |
PCIe Gen 5.0 / NVMe 2.0b, x4 lanes |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
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Package |
E1.S |
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| Connector |
SFF-TA-1006 E1.S |
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Outline Dimensions (L x W x H) |
111.25mm x 33.7mm x 9.5mm | 111.25mm x 33.7mm x 5.5/9.5/15mm |
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Flash Type |
3D NAND eTLC |
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Density Range |
7.68 TB, 15.4 TB |
1.92 TB, 3.84 TB, 7.68 TB |
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Endurance [DWPD] |
1.5 for 5 years |
1.5 for 5 years |
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Operating Temperature |
0°C to +70°C |
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Storage Temperature |
-40°C to +85°C |
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Performance |
Sequential data rates of up to 14.000 MB/s read and 10,000 MB/s write (sustained)
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Sequential data rates of up to 7.100 MB/s read and 4,200 MB/s write (sustained)
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Voltage |
VCC: 12V (+/-10%) |
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Average Power |
19.5 W | 14.5 W |
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DRAM |
DDR4 DRAM |
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MTBF |
> 2,000,000 hours |
> 2,500,000 hours |
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Data Reliability |
< 1 sector per 10^17 bits |
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| Features & Tools |
powersafe™ Functionality |
OCP NVMe Cloud SSD Specification 1.0 support |
M.2 PCIe SSD
N3000
- M.2 form factor 2280 & 2242
- PCIe Gen4 / NVMe 1.4 / four lanes
- 3D NAND TLC up to 1.92 TB
- Temperature range up to -40°C to 85°C
- High Performance
- AES256 Encryption / TCG Opal 2.0
- Crypto erase / IEEE 1667
N3002
- M.2 form factor 2280
- Powersafe
- PCIe Gen4 / NVMe 1.4 / four lanes
- 3D NAND TLC up to 1.92 TB
- Temperature range up to -40°C to 85°C
- High Performance
- AES256 Encryption / TCG Opal 2.0
- Crypto erase / IEEE 1667
N3202
- M.2 form factor 2280
- Powersafe
- PCIe Gen4 / NVMe 1.4 / four lanes
- High endurance 3D NAND TLC up to 1.92 TB
- Temperature range 0°C to 75°C
- High Performance
- AES256 Encryption / TCG Opal 2.0
- Crypto erase / IEEE 1667
N2000 / N2600
- M.2 外形规格 2280
- PCIe Gen3/NVMe 1.2 两通道
- DRAM 支持的 FTL
- 工业 3D NAND TLC/pSLC
- 温度范围高达 -40°C 至 85°C
- 数据照管
- AES256 加密
- 现场固件更新
The PCIe interface with NVMe protocol has become the new standard for consumer, enterprise and embedded applications. Although all three use the same SSD architecture, the individual requirements differ significantly. While high capacity and speed are most important for client and enterprise applications and are addressed by the market, the resulting heat generation poses a huge challenge to embedded applications.
The necessity to adopt the new interface standard while still just requiring small capacities ask for dedicates products. Immunity against data loss at power fail is a strong requirement for embedded and enterprise applications.
For industrial and embedded markets Swissbit addresses these different needs with the N-20m2 / N2000 with HMB support, low power consumption and small form factors, and with the high performance N3002 and N-30m2 with powersafe™ hardware power fail protection. They feature thermal and data care management and various security options. Both series are also available in pSLC variants with highly increased endurance. The N3202 powersafe™ is optimized for NetCom and enterprise applications that require enterprise grade endurance with a strong Swissbit typical value set.
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Series Name |
N-20m2 / N-26m2 |
N3000 |
N3002 / N3602 |
N3202 |
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Standard & Interface |
PCIe 3.1 / NVMe 1.3 |
PCIe 4.0 / NVMe 1.4 |
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Package |
PCIe M.2 |
PCIe M.2 |
PCIe M.2 |
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Connector |
75 pos. Edge Connector |
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Outline Dimensions |
80, 42, 30 x 22 x 3.5 mm | 80, 42 x 22 x 3.58 mm | 80 x 22 x 3.58 mm | |
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Flash Type |
3D NAND TLC / 3D NAND pSLC |
high endurance |
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Density Range |
TLC: 15 GB - 480 GB |
TLC: 240 GB – 3,840 GB pSLC: 80 GB – 320 GB |
TLC: 240 GB – 3,840 GB | |
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Data Retention |
10 years @ life begin |
3 years @ life begin |
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Endurance [DWPD] |
N-2x: max. 1.8 / 54 |
max 1.34 |
max 1.34 / 15.3 |
max 1.5 DWPD |
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Operating Temperature |
N-2x: |
Industrial: -40°C to +85°C |
Commercial: 0°C to +70°C |
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Storage Temperature |
-40°C to +85°C |
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Performance Sequential Read (MB/s) |
up to 1,775 / 1,780 |
up to 3,850 / 3,850 |
up to 3,850 |
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Voltage |
VCC: 2.70 – 3.60 |
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DRAM |
HMB support |
DRAM support |
DRAM support |
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| Features & Tools | Active and Passive Data Care Management AES 256 / E2E Data Path Protection FW Power Fail Data Loss Protection Active State Power Management (ASPM) Support TCG OPAL 2.0 Swissbit Device Manager (SBDM) Tool and SDK for SBDM(on request) |
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规格
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.
Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).