M.2 PCIE


SATA インターフェースは、高速インターフェースとして組込みおよび情報通信システムでは現在まだ主流ですが、さらに高速な PCIe へ移行しています。PCI エクスプレスは、限界がある SATA インターフェースの速度問題を解決し、SSD 本来の高速性能を活かすことができ、かつ NVMe プロトコルと組合せ、高速ソリューションを可能にします。

更なる高速化へ新しいプロトコルとして誕生した重要な革新技術の NVMe は、不揮発性メモリベース(Non-Volatile Memory)として、PCI エクスプレス(PCIe)バスを介したフラッシュドライブと、PC 接続の大幅な高速化を実現し、より効率的なコマンドを使用することで、読取りおよび書込みリクエストのレイテンシを大幅に削減します。

しかし、さらに高速化すると、特に 4 レーン構成を使用した場合は消費電力も高くなります。

Swissbit の N-10m2 モジュール(PCIe Gen3/NVMe 1.2 モジュール)は、PCIe x 2 レーンだけを使うことで、高速パフォーマンスでも低消費電力を維持するように設計され、1 つの PCIe レーンのみで動作している場合でも、パフォーマンスは SATA の制限を超えます。
高寿命要件を満たすために、N-10m2 では、N-16m2 シリーズ名の pSLC バージョンもご利用いただけます。TWB の値は 10 倍以上になります。

新しい N-20m2 は、PCIe Gen3.1/NVMe 1.3 および 4 レーン向けの堅牢で低消費電力のソリューションです。ホストメモリバッファ動作をサポートし、高いパフォーマンスを実現します。
この製品には、小型のシステム用に小型の M.2 2230 フォーマット、標準の 2242 および 2280 サイズがあります。 N-20m2 には、以下の pSLC バージョンも用意されています。 N-26m2.

Series Name

N-10m2 / N-16m2

N-20m2 / N-26m2

Standard & Interface

PCIe 3.1 / NVMe 1.2, x2 lanes

PCIe 3.1 / NVMe 1.3, x4 lanes

Package

PCIe M.2 (2280)

PCIe M.2 (22110 to 2230)

Connector

75 pos. Edge Connector

B & M key

75 pos. Edge Connector

M key

Outline Dimensions

80 x 22 x 2.23 mm 80,42,30 x 22 x 3.5 mm
110,60 x 22 x 3.5 mm on request

Flash Type

3D NAND TLC / 3D NAND pSLC

Density Range

120 GB - 960 GB / 40 GB - 320 GB

15 GB - 480 GB / 5 GB - 160 GB

Data Retention

10 years @ life begin

1 year @ life end

Endurance [DWPD]

max 2.17 / 23.9

max. 0.6 / 6.0

Operating Temperature

Commercial: 0°C to +70°C /  Industrial: -40°C to +85°C

Storage Temperature

-40°C to +85°C

Performance

Sequential Read (MB/s)

Sequential Write (MB/s)

Random 4KB Read (IOPS)

Random 4KB Write (IOPS)

 

up to 1,600 / 1,600

up to 1,000 / 1,050

up to 190,000 / 190,000

up to 190,000 / 190,000

 

up to 1,750 / 1,750

up to 720 / 720

up to 140,000 / 140,000

up to 100,000 / 100,000

Voltage

VCC: 2.70 – 3.60

Power Consumption

Max. Read Active: 4.4 W
Max. Write Active: 3.5 W
Power State 3: < 500 mW

Typ. Read: 3.0 W
Typ. Write: 2.4 W
Power State 3: < 480 mW

DRAM

DRAM supported FTP

HMB support

Features & Tools Active and Passive Data Care Management
AES 256 / E2E Data protection
Power Fail Data Loss Protection
Active State Power Management (ASPM) Support
NVMe Security Command Support
In-Field Firmware Update
Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T.)
TCG OPAL 2.0 (on request for N-10m2 and N-20m2)
Swissbit Life Time Monitoring (SBLTM) Tool and SDK for SBLTM (on request)
Data care management
Data Care Management

Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.

Life Time Monitoring (LTM)
Life time monitoring (LTM)

The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.

Power Fail Protection & Recovery
Power fail protection

Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.

Read-only optimized
Read-only optimized

In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.

Secure erase
Secure erase (Sanitize / Purge) / Fast erase

This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.

Shock & Vibration
Shock and vibration

Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.

Temperature sensor
Temperature sensor

The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.

TRIM support
Trim support

The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.

Write Amplification Factor
WAF reduction

The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.

Wear leveling
Wear leveling

Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.

Wide temperature support
Wide temperature support

Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).