M.2 PCIE


Obwohl SATA in Embedded- und NetCom-Systemen immer noch die vorherrschende Schnittstelle ist, gehört die Zukunft PCIe. PCIe überwindet die Bandbreitenbeschränkungen von SATA und bietet flexible Lösungen mit mehreren Lanes, die miteinander kombiniert werden können.

Eine wichtige Innovation, mit der sich die Leistung steigern lässt, ist das neue Protokoll NVMe, das speziell für nichtflüchtigen Speicher entwickelt wurde. Effizientere Befehle verringern die Latenz von Lese- und Schreibanforderungen erheblich.

Bei höherer Leistung kommt es auch zu einem höheren Stromverbrauch, insbesondere bei der üblichen Konfiguration mit 4 Lanes.

Das N-10m2-Modul von Swissbit mit PCIe Gen3 und NVMe 1.2 verwendet PCIe mit nur 2 Lanes. Dadurch reduziert sich der Stromverbrauch, ohne dass die Leistung abnimmt. Selbst PCIe mit einer einzigen Lane übertrifft immer noch die Leistungsgrenzen von SATA.
Wenn höhere Endurance benötigt wird, dann bieten die pSLC Versionen N-16m2 und N-18m2 mehr als 10-fache TBW Werte

Die neu eingeführte N-20m2 ist eine sehr robuste stromsparende und kosteneffiziente Lösung mit PCIe Gen 2.1 / NVMe 1.3 und 4 Lanes. Sie unterstützt Host Memory Buffer Betrieb und liefert damit eine Perfomance vergleichbar mit DRAM basierten Modulen.
Die N-20m2 ist in einem kleinen M.2 2230 Format erhältlich sowie in den Standards 2242 und 2280. Auch hier ist eine pSLC Version N-26m2 verfügbar.

Series Name

N-10m2 / N-16m2

N-12m2 / N-18m2

N-20m2 / N-26m2

Standard & Interface

PCI Express (PCIe) Specification Revision 3.1 / NVMe 1.2, x2 lanes

PCIe 3.1 / NVMe 1.3, x4 lanes

Package

PCI Express® M.2 (2280)

PCI Express® M.2 (22110 to 2230)

Connector

75 pos. Edge Connector

B & M key

75 pos. Edge Connector

M key

Outline Dimensions

80 x 22 x 2.23 mm 80,42,30 x 22 x 3.5 mm
110,60 x 22 x 3.5 mm on request

Flash Type

3D NAND TLC / 3D NAND pSLC

Density Range

120 GB - 960 GB / 40 GB - 320 GB

30 GB - 240 GB / 10 GB - 80 GB

15 GB - 480 GB / 5 GB - 160 GB

Data Retention

10 years @ life begin

1 year @ life end

Endurance [DWPD]

max 2.17 / 25.0

max. 1.42 / 15.2

max. 0.6 / 6.0

Operating Temperature

Commercial: 0°C to +70°C /  Industrial: -40°C to +85°C

Storage Temperature

-40°C to +85°C

Performance

Sequential Read (MB/s)

Sequential Write (MB/s)

Random 4KB Read (IOPS)

Random 4KB Write (IOPS)

 

up to 1,600 / 1,620

up to 1,000 / 1,070

up to 190,000 / 195,000

up to 190,000 / 195,000

 

up to 1,570 / 1,520

up to 860 / 860

up to 100,000 / 148,000

up to 166,000 / 166,000

 

up to 1,750 / 1,750

up to 720 / 720

up to 140,000 / 140,000

up to 100,000 / 100,000

Voltage

VCC: 2.70 – 3.60

Power Consumption

Max. Read Active: 4.1 W
Max. Write Active: 3.6 W
Power State 3: < 500 mW

Max. Read Active:3.0 W
Max. Write Active: 2.4 W
Power State 3: < 500 mW
Typ. Read: 3.0 W
Typ. Write: 2.4 W
Power State 3: < 480 mW

DRAM

DRAM supported FTP

no DRAM support

HMB support

Features & Tools Active and Passive Data Care Management
AES 256 / E2E Data protection
Power Fail Data Loss Protection
Active State Power Management (ASPM) Support
NVMe Security Command Support
In-Field Firmware Update
Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T.)
TCG OPAL 2.0 (on request for N-10m2 and N-20m2)
Swissbit Life Time Monitoring (SBLTM) Tool and SDK for SBLTM (on request)
Data care management
Data Care Management

Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.

Life Time Monitoring (LTM)
Life time monitoring (LTM)

The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.

Power Fail Protection & Recovery
Power fail protection

Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.

Secure erase
Secure erase (Sanitize / Purge) / Fast erase

This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.

Shock & Vibration
Shock and vibration

Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.

Temperature sensor
Temperature sensor

The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.

TRIM support
Trim support

The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.

Write Amplification Factor
WAF reduction

The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.

Wear leveling
Wear leveling

Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.

Wide temperature support
Wide temperature support

Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).