与2.5英寸硬盘相同,Swissbit mSATA (MO-300)、SLIM SATA (MO-297)和M.2固态硬盘的目标是需要小型可移动固态存储的嵌入式应用。这些固态硬盘模块的设计坚固耐用,可抵御-40˚C至85˚C范围内的频繁温度变化,可承受高冲击和振动,并提供卓越的性能和耐久性。
X-86、X-75、X-76、X-60、X-66和X-600系列针对不同的使用情况,包括操作系统的启动、数据记录、监控记录或保险库。此外,X-78m2还针对轻型企业应用。写入的数量和类型决定了所需的TBW耐久度。最新增加的X-86m2针对的是真正的工业应用,它具有强大、可靠、低功耗的模块设计,基于专用的工业控制器和固件。
Series Name | X-66m2 | X-600m2 | X-76m2 / X-78m2 | X-75m2 |
X-86m2 |
Interface Data Transfer Mode |
SATA III – 6 Gbit/s ATA8 |
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Connector | 75 pos. Edge Connector B & M key |
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Outline Dimensions | 22 x 42 x 3.6 mm | ||||
Flash Type |
pSLC everbit |
SLC | 3D NAND pSLC | 3D NAND TLC | 3D NAND pSLC |
Density Range |
X-66m2: 16-120 GB |
8-64 GB |
X-76m2: 10-160 GB |
30-960 GB |
10-160 GB |
Data Retention | 10 years @ life begin 1 year @ life end |
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Endurance [DWPD] JESD219 Client Endurance Workload |
13.2 | 36.3 | max 22.7 / max 60.5 | max 1.2 | max 13.3 |
Operating Temperature | Commercial: 0°C to +70°C Industrial: -40°C to +85°C |
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Storage Temperature | -40°C to +85°C | ||||
Performance Sequential Read (MB/s) Sequential Write (MB/s) Random 4KB Read (IOPS) Random 4KB Write (IOPS) |
up to 520 up to 340 up to 72k up to 78k |
up to 520 up to 245 up to 76k up to 54k |
up to 560 / 560 up to 480 / 490 up to 72.9k / 72.9k up to 84.9k / 85.9k |
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Voltage | 3.3 V ± 5 % | ||||
Features & Tools |
FW based Power Fail Safety |
E2E Data Path Protection AES 256 Encryption (optional) / TCG OPAL 2.0 (optional) FW based Power Fail Safety SBDM Tool & SDK for detailed S.M.A.R.T. based Life Time Monitoring |
Series Name | X-60m2 / X-66m2 | X-600m2 | X-76m2 / X-78m2 |
X-75m2 / X-75m2 P |
Interface Data Transfer Mode |
SATA III – 6 Gbit/s ATA8 |
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Connector | 75 pos. Edge Connector B & M key |
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Outline Dimensions | 22 x 80 x 3.58 mm 22 x 60 mm X-60m2 |
22 x 80 x 3.58 mm | ||
Flash Type |
MLC durabit |
SLC | 3D NAND pSLC | 3D NAND TLC |
Density Range |
X-60m2: 30-960 GB |
16-128 GB |
X-76m2: 10-320 GB |
X-75m2: 30-1,920GB |
Data Retention | 10 years @ life begin 1 year @ life end |
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Endurance [DWPD] JESD219 Client Endurance Workload |
13.2 / 2.0 | 36.3 | max 22.7 / 60 | max 1.2 |
Operating Temperature | Commercial: 0°C to +70°C Industrial: -40°C to +85°C |
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Storage Temperature | -40°C to +85°C | |||
Performance Sequential Read (MB/s) Sequential Write (MB/s) Random 4KB Read (IOPS) Random 4KB Write (IOPS) |
up to 520 / 520 up to 460 / 450 up to 75k / 80k up to 75k / 75k |
up to 520 up to 405 up to 76k up to 73k |
up to 560 / 560 up to 480 / 480 up to 72.9k / 70.4k up to 84.9k / 85.9k |
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Voltage | 3.3 V ± 5 % | |||
Features & Tools |
FW based Power Fail Safety |
E2E Data Path Protection AES 256 Encryption (optional) / TCG OPAL 2.0 (optional) FW based Power Fail Safety X-75m2 P: HW powersafe™ protection SBDM Tool & SDK for detailed S.M.A.R.T. based Life Time Monitoring |
Swissbit 的 mSATA 全尺寸 MO-300 SSD 模块是用于需要采用较小、可拆卸外形规格进行固态存储的嵌入式应用的理想解决方案。每台设备在发货之前均先在完整温度范围内经广泛测试。
带 pSLC 的 X-66m/带 MLC 的 X-60m 和带 SLC 技术的 X-600m 提供 SATA 6Gb/s 接口,以及 DRAM 支持的 FTL。它们专为所有需要高数据传输率(在顺序访问中高达 520 MB/s,在 4KB 随机访问中达 78,000 IOPS)的工业、网络控制通信和汽车应用而设计。
采用工业级 3D NAND 的全新 X-75m 模块支持后台数据刷新、AES 和端到端数据保护,设计用于严苛的应用。
对于更高的耐久性要求,具有 3D pSLC 模式的 X-76m 是理想的解决方案。
Series Name |
X-60m / X-66m |
X-600m |
X-75m / X-76m |
Interface |
SATA Gen3 – 6 Gbit/s |
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Connector |
52 pos. Edge Connector (PCI Express mini) |
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Outline Dimensions |
50.8 x 29.85 x 3.8 mm |
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Flash Type |
MLC durabit |
SLC |
3D NAND TLC / pSLC |
Density Range |
X-60m: 30–480 GB |
8-128 GB |
X-75m: 30-960 GB |
Data Retention |
10 years @ life begin |
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Endurance [DWPD] |
2.0 / 13.2 | 33.8 |
max 1.2 / max 22.7 |
Operating Temperature |
Commercial: 0°C to +70°C |
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Storage Temperature |
-40°C to +85°C |
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Performance Sequential Read (MB/s) |
up to 520 / 520 |
up to 520 |
up to 565 / 560 |
Voltage |
3.3 V ± 5 % |
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Features & Tools |
FW based Power Fail Safety |
E2E Data Path Protection AES 256 Encryption (optional) TCG OPAL 2.0 (optional) FW based Power Fail Safety SBDM Tool & SDK for detailed S.M.A.R.T. based Life Time Monitoring |
Swissbit 的 SATA MO-297 固态硬盘模块是用于需要采用较小、可拆卸外形规格进行固态存储的嵌入式应用的理想解决方案。每台设备在发货之前均先在完整温度范围内经广泛测试。X-60s/X-600s 系列 (MLC/SLC) 专为所有需要高数据传输率(在顺序访问中高达 525 MB/s,在 4KB 随机访问中达 79,000 IOPS)的工业、网络控制通信和汽车应用而设计。
采用工业级 3D NAND 的全新 X-75s 模块支持后台数据刷新、AES 和端到端数据保护,设计用于严苛的应用。对于更高的耐久性要求,具有 3D pSLC 模式的 X-76s 是理想的解决方案。
Series Name |
X-60s |
X-600s |
X-75s / X-76s |
X-78s |
Interface |
SATA Gen3 – 6 Gbit/s |
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Connector |
15 + 7 pin Serial ATA Connector |
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Outline Dimensions |
54 x 39 x 4.0 mm | |||
Flash Type |
MLC durabit |
SLC |
3D NAND TLC / pSLC |
3D NAND pSLC |
Density Range |
30–480 GB |
8-128 GB |
X-75s: 30-960 GB |
32-320 GB |
Data Retention |
10 years @ life begin |
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Endurance [DWPD] |
2.0 | 36.32 |
max 1.2 / max 22.7 |
max 48.8 |
Operating Temperature |
Commercial: 0°C to +70°C |
Industrial: -40°C to +85°C |
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Storage Temperature |
-40°C to +85°C |
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Performance Sequential Read (MB/s) |
up to 520 |
up to 520 |
up to 565 / 560 |
up to 560 |
Voltage |
3.3 V ± 5 % |
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Features & Tools |
FW based Power Fail Safety |
E2E Data Path Protection AES 256 Encryption (optional) TCG OPAL 2.0 (optional) FW based Power Fail Safety SBDM Tool & SDK for detailed S.M.A.R.T. based Life Time Monitoring |
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.
This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.
Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).