管理型 NAND BGA 是最小外形规格,将可靠且易于连接的存储集成到系统上。
Swissbit 提供具有 JEDEC 5.0 标准的 e.MMC 型号 EM-20 和符合 5.1 标准的新 EM-30
所有 Swissbit e.MMC 产品均是可靠且稳定的存储产品,具有真工业工作温度和详细的寿命监视。
Series Name |
EM-30 |
EM-36 |
EM-20 |
EM-26 |
Compliance |
JEDEC e.MMC 5.1 |
JEDEC e.MMC 5.0 |
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Interface Data Transfer Mode |
e.MMC 1-bit, 4-bit, 8-bit up to HS400 |
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Package |
153-ball BGA, 0.5mm pitch |
153-ball BGA, 0.5mm pitch |
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Max Outline Dimensions |
11.5 x 13 x 1.2 mm 14.0 x 18 x 1.4 mm |
11.5 x 13.0 x 1.0 mm |
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Flash Type |
3D TLC |
3D pSLC / enhanced mode |
MLC |
pSLC / enhanced mode |
Density Range |
4-512 GB |
5-80 GB |
4-64 GB |
2-32 GB |
Data Retention |
10 years @ life begin |
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Endurance |
3k @ TLC mode |
3k @ MLC mode |
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Operating Temperature |
Industrial: -40°C to +85°C |
Industrial: -40°C to +85°C |
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Storage Temperature |
-40°C to +85°C |
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Performance Sequential Read (MB/s) |
up to 320 up to 240 up to 4,600 up to 2,900 |
up to 330 up to 250 up to 4,500 up to 2,900 |
up to 175 |
up to 240 up to 120 up to 6,700 up to 6,700 |
Voltage |
VCCQ: 1.70-1.95V / 2.70-3.60V ; VCC: 2.70-3.60 |
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Features & Tools |
High performance up to HS400 mode |
High performance up to HS400 mode Detailed block erase counter data via the Extended CSD Register |
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).
EN-20 是具有 DRAM 支持和高达 4 通道操作模式的 PCIe 3.1/NVMe 1.3 产品,提供高性能和短延迟,适用于现代应用。提供后台自适应读取刷新和介质扫描的数据照管可保持闪存块的保留,即使对于稀疏的写入应用也可实现较长的产品利用率。
E2000 和 E2600 是采用新型高密度 NAND 闪存的最新升级产品。
对于高耐久性要求,与 EN-20 相比,采用 3D NAND pSLC 的 EN-26 提供高出十倍的耐久性。
Series Name |
EN-20 / E2000 |
EN-26 / E2600 |
Interface Data Transfer Mode |
PCIe Gen 3.1, 4 PCIe lanes |
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Package |
BGA 391 ball, 0.8mm pitch |
|
Outline Dimensions |
16mm x 20mm x 1.8mm |
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Flash Type |
3D NAND TLC |
3D NAND pSLC |
Density Range |
15-480 GB | 5-160 GB |
Data Retention |
10 years @ life begin |
|
Endurance [DWPD] |
up to 1.8 / 2.2 |
up to 54 / 79 |
Operating Temperature |
-40°C to +85°C (up to 95°C TCase) |
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Storage Temperature |
-40°C to +85°C |
|
Performance Sequential Read (MB/s) |
up to 1,775 / 1,750 up to 750 / 865 up to 140,000 / 140,000 up to 112,000 / 134,000 |
up to 1,780 / 1,780 up to 758 / 870 up to 140,000 / 89,000 up to 136,000 / 136,000 |
MTBF |
~3,000,000 hours |
|
Voltages |
3.3V ±5%, 1.8V ±5%, 0.9V ±5% | |
Features & Tools |
HMB support |
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).