Data Center 2.5‘‘ PCIe SSD
D1200
- Datacenter SSD U.3 (15mm) PCIe Gen4x4, NVMe 1.4 interface
- Device densities 8TB and 16TB
- Sequential Read up to 6,900 MB/s, Random Read 4K up to 1,600k IOPS
- Sequential Write up to 7,000 MB/s, Random Write 4K up to 900 IOPS (16TB)
- Multi-namespace support up to 128
- High endurance 1.5 DWPD
- JEDEC enterprise workload over 5 years lifetime
- AES 256 Data Encryption & Crypto Erase
- powersafe: power fail protection
N4200
- 2.5" U.3 Form Factor, backwards compatible to U.2
- 8 TB and 16 TB available, Enterprise grade eTLC 3D NAND
- PCIe Gen4.0 / NVMe 1.4 / four lanes
- Sequential Read up to 7,000 MB/s
- Sequential Write up to 4,000 MB/s
- Modular Flash firmware architecture
- Optimized FW to specific customer workload
- High reliability
- QoS for Performance and Latency Consistency, Consistent Performance and Latency over life with complex mixed workloads
The new D1200 PCIe/NVMe SSD represents a significant leap forward in high-performance flash storage solutions. The Data Center SSD offers high reliability, ultimate performance, and low power consumption for I/O-intensive data center applications such as databases, data storage, cloud computing, and artificial intelligence. With an extended feature set that increases sequential and random write performance, peak efficiency of data center operations is ensured.
Swissbit's N4200 Data Center SSD enables server engineers to achieve reliable, high storage capacity that delivers consistently high performance and low latency. The N4200 is able to measure its respective workload. Thanks to this unique feature, the workload profile can be analyzed and the firmware configured accordingly, tailored to a specific workload profile, e.g. for web, streaming, application and cache servers. The firmware optimally matched to the workload profile keeps write amplification low and improves endurance.
|
Series Name |
D1200 |
N4200 |
|
Standard & Interface |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
|
Package |
2.5”, U.3 backwards compatible to U.2 |
2.5”, U.3 backwards compatible to U.2 |
| Connector |
SFF-8639 U.3 |
SFF-8639 U.3 |
|
Outline Dimensions (L x W x H) |
100.45mm x 69.85mm x 14.8mm | 100.4mm x 69.9mm x 14.8mm |
|
Flash Type |
3D NAND eTLC |
3D NAND eTLC |
|
Density Range |
7.68 TB, 15.36 TB |
7.68 TB, 15.36 TB |
|
Endurance [DWPD] |
> 1.5 for 5 years |
1 to 3 for 5 years |
|
Operating Temperature |
0°C to +70°C |
0°C to +70°C |
|
Storage Temperature |
-40°C to +85°C |
-40°C to +85°C |
|
Performance Clusters |
Optimized for highest system performance up to 900k IOPS and 7,000 MB/s |
Optimized for real world workloads seen in most common Datacenter application clusters |
|
Voltage |
VCC: 12V (-20%, +10%) |
VCC: 12V (±8%) |
|
Average Power |
16.3 W | 16.3 W |
|
DRAM |
DDR4 DRAM |
DDR4 DRAM |
|
MTBF |
> 2,000,000 hours |
> 2,000,000 hours |
|
Data Reliability |
< 1 sector per 10^17 bits |
< 1 sector per 10^17 bits |
| Features & Tools |
Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T., Telemetry) |
Modular flash SSD controller architecture designed specifically for the extreme workload demands of |
Enterprise 2.5‘‘ U.2 PCIe SSD
N5200 U.2
- Enterprise SSD U.2 (15mm) and E1.S (5.9mm/9.5mm/15mm enclosures available)
- Compliant to PCIe Gen 4x4 lanes, NVMe 1.4 interface
- User density 1.92TB, 3.84TB and 7.68TB
- Sequential data rates of up to 7,000 MB/s read and 4,200 MB/s write (sustained)
- Random data rates up to 1,350 kIOPS read and 450 kIOPS write (sustained)
- High endurance >1 DWPD, JEDEC enterprise workload over 5 years lifetime
- Multi-namespace support up to 128
- Powersafe: power fail protection
- Security and encryption: TCG OPAL 2.01 / AES256
The N5200 Gen4 PCIe U.2 SSD is optimized to serve the need for increasingly evolved storage for enterprise and edge data centers. The high performance SSD delivers a low KIOPS/watt performance while supporting excellent Quality of Service (QoS). Furthermore, the N5200 supports a wide range of features for modern enterprise data centers, including hardware-based security, advanced telemetry, data path and power failure protection. This make it an ideal choice for high-performance and mission-critical applications where reliability, durability, and scalability are essential.
|
Series Name |
N5200 U.2 |
|
Standard & Interface |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
|
Package |
2.5” |
| Connector |
SFF-8639 U.2 |
|
Outline Dimensions (L x W x H) |
100.2mm x 69.85mm x 15mm |
|
Flash Type |
3D NAND eTLC |
|
Density Range |
1.92 TB, 3.84 TB, 7.68 TB |
|
Endurance [DWPD] |
> 1.0 for 5 years |
|
Operating Temperature |
0°C to +70°C |
|
Storage Temperature |
-40°C to +85°C |
|
Performance |
Sequential data rates of up to 7,000 MB/s read and 4,200 MB/s write (sustained)
|
|
Voltage |
VCC: 12V (+/-10%) |
|
Average Power |
14.5 W |
|
DRAM |
DDR4 DRAM |
|
MTBF |
> 2,500,000 hours |
|
Data Reliability |
< 1 sector per 10^17 bits |
| Features & Tools |
OCP NVMe Cloud SSD Specification 1.0 support |
规格
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.
Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.