SD Memory Cards
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S-45
- S-45 MLC durabit™
- Page based Flash management
- High IOPS rate and endurance
- Autonomous Data Care Management
- Industrial grade SD Card
- Power Fail protection & Read Disturb Management
- TS16949 certified production line
- Chip On Board design for highest robustness
S-46
- S-46 pSLC everbit™
- Page based Flash management
- High IOPS rate and endurance
- Autonomous Data Care Management
- Industrial grade SD Card
- Power Fail protection & Read Disturb Management
- TS16949 certified production line
- Chip On Board design for highest robustness
S-450
- S-450 SLC
- Highest sequential performance
- Autonomous Data Care Management
- Industrial grade SD Card
- Power Fail protection & Read Disturb Management
- TS16949 certified production line
- Chip On Board design for highest robustness
S-455
- S-455 SLC
- Page based Flash management
- High IOPS rate and maximum endurance
- Autonomous Data Care Management
- Industrial grade SD Card
- Power Fail protection & Read Disturb Management
- TS16949 certified production line
- Chip On Board design for highest robustness
The latest SD memory card series S-45 (MLC version), S-46 (pSLC version), S-450 (SLC version) and S-455 (SLC version) include the same set of sophisticated features and, through the implementation of UHS-I, support data transfer rates of up to 90 MB/s. The combination of MLC (Multi Level Cell) NAND Flash with an innovative controller and page based firmware technology enables prolonged data retention and extended life cycles despite the write endurance limitations of MLC Flash. The S-45, S-46 and S-455 SD memory cards excel with a random write data rate of up to 1400 IOPS.
The special firmware features in the S-4x series include a powerful built-in Error Correction, Read Retry, Autonomous Data Care Management, Life Time Monitoring & diagnostic features, Randomizer, Wear Leveling & Bad Block Management algorithms and intelligent Power Fail Protection.
All Swissbit SD Cards can withstand extreme environmental conditions. They provide the highest level of mechanical stability and enhanced ESD protection. Furthermore, the hard gold SD connectors endure a minimum of 20,000 insertion cycles.
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Series Name |
S-200 S-220 |
S-46 |
S-45 |
S-450 |
S-455 |
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Interface Data Transfer Mode |
SD 2.0, Class 6 / 10 |
SD 3.0, Class 10, UHS-I
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Connector |
SD |
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Outline Dimensions |
32 x 24 x 2.1 mm |
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Flash Type |
SLC |
pSLC everbit |
MLC durabit |
SLC |
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Density Range |
512 MB – 2 GB (SD) 4 GB – 8 GB (SDHC) |
2 GB (SD) 4 GB – 32 GB (SDHC) 64 GB (SDXC) |
4 GB – 32 GB (SDHC) 64GB – 128 GB (SDXC) |
512 MB – 2 GB (SD) 4 GB – 32 GB (SDHC) |
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Data Retention |
10 years @ life begin 1 year @ life end |
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Endurance (Flash Cell Level) |
100,000 P/E Cycles |
20,000 P/E Cycles endurance optimized |
3,000 P/E Cycles endurance optimized |
100,000 P/E Cycles |
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Operating Temperature |
Extended: -25°C to +85°C Industrial: -40°C to +85°C |
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Storage Temperature |
-40°C to +100°C |
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Performance Sequential Read (MB/s) Sequential Write (MB/s) Random 4KB Read (IOPS) Random 4KB Write (IOPS) |
up to 25 up to 24 up to 19 |
up to 50 up to 55 up to 1350 up to 1400 |
up to 40 up to 12 up to 750 up to 650 |
up to 90 up to 75 up to 1200 up to 30 |
up to 44 up to 38 up to 1340 up to 1240 |
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MTBF |
≥ 3,000,000 hours |
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Shock |
1,000 G |
1,500 G |
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Vibration |
15 G |
50 G |
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Humidity |
85 % RH 85°C, 1,000 hrs |
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Voltage |
2.7 – 3.6 V Normal |
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Power Consumption |
Read typ 28 mA Write typ 55 mA |
Read typ 75 mA Write typ 80 mA |
Read typ 100 mA Write typ 100 mA |
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Features & Tools |
Proven Power Fail Safety Sophisticated Wear Leveling & Bad Block management Diagnostic features & Life Time Monitoring through SD / SPI command set |
Proven Power Fail Safety Sophisticated Wear Leveling & Bad Block management Autonomous Data Care Management SBLTM Tool & SDK for detailed Life Time Monitoring |
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Part Number |
SFSDxxxxLvBNxss-t-dd-rrr-ccc |
SFSDxxxxLxBMxss-t-dd-rrr-ccc |
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Product Features
Data Care Management
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
ESD and EMI safe
The product designs are in line with the latest regulations for electrostatic discharge and electromagnetic interference. Swissbit strives to exceed these limits with our own in-house technology and production capabilities, for example with System-in-Package (SiP) competence.
Life time monitoring (LTM)
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Longevity
The longevity product lines use special components with a long-term supply commitment of up to 10 years. These products offer lowest TCO in demanding applications with high requalification cost.
Power fail protection
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
Shock and vibration
Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.
WAF reduction
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Wear leveling
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Wide temperature support
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).