SD 存储卡


最新的 SD 存储卡系列 S-30 和 S-50 基于 3D NAND TLC,提供最佳成本效益。S-30 主要适用于具有高成本敏感型应用,而 S-50 是适用于所有用例的真正工业 SD 卡。对于高耐久性要求,pSLC 型号 S-56 是理想解决方案。这些卡支持 10 类、U3 模式。

持续供应的系列 S-45(MLC 型号)、S-46(pSLC 型号)、S-450(SLC 型号)和 S-455(SLC 型号)包括相同的先进功能,且通过实施 UHS-I,支持高达 90 MB/s 的数据传输率。MLC(多层单元)NAND 闪存与工业控制器和基于页面的固件技术相结合,即使存在 MLC 闪存耐久性限制,也可延长数据保留和使用寿命周期。S-45、S-46 和 S-455 SD 存储卡性能出色,提供高达 1400 IOPS 的随机写入数据速率。

最新系列中的特殊固件功能包括强大的内置错误纠正、读取重试、自主数据照管、寿命监视&诊断功能、随机性发生器、磨损均衡&坏块管理算法和智能断电保护。

所有 Swissbit SD 卡均可耐受极端的环境条件。它们提供最高级别的机械稳定性和增强的 ESD 保护。此外,硬金材质的 SD 连接器可承受最少 20,000 次插拔周期。

Series Name

S-250

S-455 / S-450

S-46 / S-45

S-30

S-56 / S-50 / S-58 / S-55

Interface

Data Transfer Mode

SD 2.0, Class 6

SD 3.0, Class 10, UHS-I

SD 6.1, Class 10, UHS-I, V30, A1

SD 6.1, Class 10, UHS-I, A1

Connector

SD

Outline Dimensions

32 x 24 x 2.1 mm

Flash Type

SLC

S-46: pSLC everbit
S-45: MLC durabit

3D NAND TLC

3D NAND pSLC / TLC

Density Range

512 MB-2 GB

512 MB-32 GB

S-46: 2-64 GB
S-45: 4-128 GB
32-256 GB

S-56: 4-64 GB
S-50: 16-256 GB
S-58: 16-128 GB
S-55: 64-512 GB

Status

Active

Active

Active

New

Data Retention

10 years @ life begin
1 year @ life end

Endurance

(Flash Cell Level)

100k P/E Cycles

100k P/E Cycles

S-455:
endurance optimized

S-46: 20k P/E Cycles
S-45: 3k P/E Cycles

1k P/E Cycles

S-56/58: 30k P/E Cycles
S-50/55: 3k P/E Cycles

Operating Temperature

Extended: -25°C to +85°C
Industrial: -40°C to +85°C

Extended:
-25°C to +85°C

Extended:
-25°C to +85°C
Industrial:
-40°C to +85°C

Storage Temperature

-40°C to +100°C

-40°C to +85°C

-40°C to +100°C

Performance

Sequential Read (MB/s)

Sequential Write (MB/s)

Random 4KB Read (IOPS)

Random 4KB Write (IOPS)

 

up to 24
up to 13.5
up to 1,580
up to 29

 

up to 44 / 88
up to 38 / 73
up to 1,550 / 1,430
up to 1,300 / 28

 

up to 46 / 43
up to 52 / 21
up to 1,440 / 1,200
up to 1,260 / 950

 

up to 95
up to 85
up to 1,700
up to 1,050

 

up to 94 / 94
up to 82 / 37
up to 2,050 / 2,050
up to 820 / 1,360

MTBF

≥ 3,000,000 hours

Shock

1,000 G

1,500 G

Vibration

15 G

50 G

20 G

50 G

Humidity

85 % RH 85°C, 1,000 hrs

Voltage

2.7 – 3.6 V Normal

Power Consumption
Read typ
Write typ

 

40 mA
65 mA

 

75 mA
75 mA

 

80 mA
70 mA

 

80 mA
100mA


110 mA
110 mA

Features & Tools

Proven Power Fail Safety

Sophisticated Wear Leveling & Bad Block management

Diagnostic features & Life Time Monitoring through SD / SPI command set

S-450 block based FTL / S-455, S-45, S-46 page based FTL
Proven Power Fail Safety

Sophisticated Wear Leveling & Bad Block management

Autonomous Data Care Management

SBLTM Tool & SDK for detailed Life Time Monitoring

 

Support SD SPI mode
Static and Dynamic
Wear Leveling
Bad Block Management
Auto-Read Refresh
Embedded Mode

Support SD SPI mode
Proven Power Fail Safety
Sophisticated Wear
Leveling & Bad Block
management
Autonomous Data Care
Management
SBLTM Tool & SDK for
detailed Life Time
Monitoring

Panasonic Partnumber Capacity Swissbit recommendation Specialty Series Technology
RP-SDFC51 512 MB SFSD0512L1BM1TO-I-ME-2A1-STD
SFSD0512L1BM1TO-I-ME-221-STD
Write intensive
Read intensive
S-455
S-450
SLC
RP-SDFC01
RP-SDE01G
1 GB SFSD1024L1BM1TO-I-DF-2A1-STD
SFSD1024L1BM1TO-I-DF-221-STD
Write intensive
Read intensive
S-455
S-450
SLC
RP-SDF02G 2 GB SFSD2048L1BM1TO-I-QG-2A1-STD
SFSD2048L1BM1TO-I-QG-221-STD
Write intensive
Read intensive
S-455
S-450
SLC
RP-SDFC04
RP-SDF04G
4 GB SFSD4096L1BM1TO-I-ME-2A1-STD
SFSD4096L1BM1TO-I-ME-221-STD
Write intensive
Read intensive
S-455
S-450
SLC
RP-SDFC08
RP-SDF08G
8 GB SFSD8192L1BM1TO-I-DF-2A1-STD
SFSD8192L1BM1TO-I-DF-221-STD
Write intensive
Read intensive
S-455
S-450
SLC
RP-SDFC16
RP-SDF16G
16 GB SFSD016GL1BM1TO-I-QG-2A1-STD
SFSD016GL1BM1TO-I-QG-221-STD
Write intensive
Read intensive
S-455
S-450
SLC
RP-SDGDO4
RP-SDUE04
RP-SDPC04
RP-TDUC04
4GB SFSD4096L3BM1TO-I-GE-2D1-STD   S-45 MLC
RP-SDGDO8
RP-SDUE08
RP-SDPC08
RP-TDUC08
8GB SFSD8192L3BM1TO-I-GE-2D1-STD   S-45 MLC
RP-SDGD16
RP-SDUE16
RP-SDPC16
RP-TDUC16
16GB SFSD016GL3BM1TO-I-GE-2D1-STD
SFSD016GL2AM1TO-I-5E-221-STD
  S-45
S-50
MLC
3D TLC
RP-SDGD32
RP-SDUE32
RP-TDUC32
32GB SFSD032GL3BM1TO-I-LF-2D1-STD
SFSD032GL2AM1TO-I-5E-221-STD
  S-45
S-50
MLC
3D TLC
RP-SDHE64
RP-SDUE64
RP-TDCU64
64GB SFSD064GL3BM1TO-I-HG-2D1-STD
SFSD064GL2AM1TO-I-6F-221-STD
  S-45
S-50
MLC
3D TLC
RP-SDUE12
RP-TDUC12
128GB SFSD128GL3BM1TO-I-OG-2D1-STD
SFSD128GL2AM1TO-I-7G-221-STD
  S-45
S-50
MLC
3D TLC
RP-SDUE25
RP-TDUC25
256GB SFSD256GL2AM1TO-I-8H-221-STD   S-50 3D TLC
RP-SDQE04
RP-TDUA04
4GB SFSD4096L3BM1TO-I-GE-2DP-STD
SFSD004GL2AM1TO-I-5E-22P-STD
  S-46
S-56
MLC/pSLC-mode
3D TLC/pSLC-mode
RP-SDQE08
RP-TDUA08
8GB SFSD8192L3BM1TO-I-GE-2DP-STD
SFSD008GL2AM1TO-I-5E-22P-STD
  S-46
S-56
MLC/pSLC-mode
3D TLC/pSLC-mode
RP-SDQE16
RP-TDUA16
16GB SFSD016GL3BM1TO-I-LF-2DP-STD
SFSD016GL2AM1TO-I-ZK-22P-STD
  S-46
S-56
MLC/pSLC-mode
3D TLC/pSLC-mode
RP-TDUA32 32GB SFSD032GL3BM1TO-I-HG-2DP-STD
SFSD032GL2AM1TO-I-ZK-22P-STD
  S-46
S-56
MLC/pSLC-mode
3D TLC/pSLC-mode
Data care management
Data Care Management

Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.

Electrostatic discharge and electromagnetic interference
ESD and EMI safe

The product designs are in line with the latest regulations for electrostatic discharge and electromagnetic interference. Swissbit strives to exceed these limits with our own in-house technology and production capabilities, for example with System-in-Package (SiP) competence.

Life Time Monitoring (LTM)
Life time monitoring (LTM)

The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.

Longevity
Longevity

The longevity product lines use special components with a long-term supply commitment of up to 10 years. These products offer lowest TCO in demanding applications with high requalification cost.

Power Fail Protection & Recovery
Power fail protection

Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.

Shock & Vibration
Shock and vibration

Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.

Write Amplification Factor
WAF reduction

The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.

Wear leveling
Wear leveling

Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.

Wide temperature support
Wide temperature support

Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).