Enterprise 2.5‘‘ U.2 PCIe SSD
D2200 U.2
- Enterprise SSD U.2 (15mm)
- PCIe Gen 5 x4 lanes, NVMe 2,0b Schnittstelle
- Verfügbar mit 7,68, 15,4 und 30,7 TB
- Sequential Read bis zu 14.000 MB/s Read und 10.000 MB/s Write
- Random Read bis zu 2.600 kIOPS Read und 510 kIOPS Write
- Endurance 1,5 DWPD, JEDEC enterprise workload bei Laufzeit von 5 Jahren
- Unterstützung bis zu 128 Namespaces, EUI64/NGUID
- Powersafe: Power Fail Protection
- Security und Verschlüsselung: AES-XTS 256, Crypto Erase, Secure Boot
Die Gen5 PCIe SSD-Familie D2200 ist ausgerichtet auf Enterprise-Server und Edge Datacenter und bietet herausragende Performance mit minimaler Latenz. Die Serie zeichnet sich zudem durch ihre hohe Energieeffizienz aus und erreicht bis zu 970 MB/s pro Watt für sequenzielles Lesen. Das wirkt sich auch auf das Wärmemanagement aus: Durch optimiertes Hardware-Design und Firmware-Verbesserungen reduziert die D2200 die Wärmeentwicklung eines Servers um bis zu 20°C. Als PCI Gen5 SSD, abwärtskompatibel mit PCIe Gen4, unterstützt die Serie NVMe 2.0 und OCP 2.0 und punktet in Sachen Zukunftssicherheit. Durch unser Engagement für herausragenden Kundenservice gewährleisten wir zudem eine nahtlose Integration und maßgeschneiderten Support, abgestimmt auf Ihre Anforderungen.
|
Series Name |
D2200 U.2 |
|
Standard & Interface |
PCIe Gen 5.0 / NVMe 2.0b, x4 lanes |
|
Package |
2.5” |
| Connector |
SFF-8639 U.2 |
|
Outline Dimensions (L x W x H) |
100.2mm x 69.85mm x 15mm |
|
Flash Type |
3D NAND eTLC |
|
Density Range |
7.68 TB, 15.4 TB, 30.7 TB |
|
Endurance [DWPD] |
1.5 for 5 years |
|
Operating Temperature |
0°C to +70°C |
|
Storage Temperature |
-40°C to +85°C |
|
Sustained Performance Sequential Read Sequential Write Random Read Random Write |
up to 14,000 MB/s up to 10,000 MB/s up to 2,600 KIOPS up to 510 KIOPS |
|
Voltage |
VCC: 12 V (-20%, +10%) |
|
Average Power |
19.5 W |
|
DRAM |
DDR4 DRAM |
|
MTBF |
> 2,000,000 hours |
|
Data Reliability |
< 1 sector per 10^17 bits |
| Features & Tools |
powersafe™ Functionality |
Features
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The product designs are in line with the latest regulations for electrostatic discharge and electromagnetic interference. Swissbit strives to exceed these limits with our own in-house technology and production capabilities, for example with System-in-Package (SiP) competence.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.