Die neue D1200 PCIe/NVMe SSD stellt einen bedeutenden Fortschritt bei leistungsstarken Flash-Speicherlösungen dar. Die Datacenter-SSD bietet hohe Zuverlässigkeit, höchtesLeistung und geringen Stromverbrauch für I/O-intensive Rechenzentrumsanwendungen wie Datenbanken, Datenspeicherung, Cloud Computing und künstliche Intelligenz.
Die N4200 U.3 Datacenter-SSD von Swissbit ermöglicht es Administratoren von Rechenzentren, auf eine zuverlässige, hohe Speicherkapazität zuzugreifen, die eine konstant hohe Leistung und niedrige Latenz liefert. Die N4200 ist in der Lage, ihre jeweilige Arbeitslast zu messen. Dank dieser einzigartigen Funktion kann das Auslastungsprofil analysiert und die Firmware entsprechend konfiguriert werden, zugeschnitten auf ein bestimmtes Auslastungsprofil, z. B. für Web-, Streaming-, Anwendungs- und Cache-Server. Die optimal auf das Workload-Profil abgestimmte Firmware hält die Schreibverstärkung niedrig und verbessert die Lebensdauer.
Series Name |
D1200 |
N4200 |
Standard & Interface |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
Package |
2.5”, U.3 backwards compatible to U.2 |
2.5”, U.3 backwards compatible to U.2 |
Connector |
SFF-8639 U.3 |
SFF-8639 U.3 |
Outline Dimensions (L x W x H) |
100.45mm x 69.85mm x 14.8mm | 100.4mm x 69.9mm x 14.8mm |
Flash Type |
3D NAND eTLC |
3D NAND eTLC |
Density Range |
7.68 TB, 15.36 TB |
7.68 TB, 15.36 TB |
Endurance [DWPD] |
> 1.5 for 5 years |
1 to 3 for 5 years |
Operating Temperature |
0°C to +70°C |
0°C to +70°C |
Storage Temperature |
-40°C to +85°C |
-40°C to +85°C |
Performance Clusters |
Optimized for highest system performance up to 900k IOPS and 7,000 MB/s |
Optimized for real world workloads seen in most common Datacenter application clusters |
Voltage |
VCC: 12V (-20%, +10%) |
VCC: 12V (±8%) |
Average Power |
16.3 W | 16.3 W |
DRAM |
DDR4 DRAM |
DDR4 DRAM |
MTBF |
> 2,000,000 hours |
> 2,000,000 hours |
Data Reliability |
< 1 sector per 10^17 bits |
< 1 sector per 10^17 bits |
Features & Tools |
Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T., Telemetry) |
Modular flash SSD controller architecture designed specifically for the extreme workload demands of |
Die N5200 Gen4 PCIe U.2 SSD ist optimiert, um den Bedarf an immer fortschrittlicherem Speicher für Unternehmens- und Edge-Rechenzentren zu decken. Die Hochleistungs-SSD liefert eine niedrige KIOPS/Watt-Performance und unterstützt gleichzeitig ein hervorragendes "Quality of Service". Darüber hinaus unterstützt das N5200 eine Vielzahl von Funktionen für moderne Unternehmensrechenzentren, darunter hardwarebasierte Security, Telemetrie, Datenpfad- und Stromausfallschutz. Dies macht es zur idealen Wahl für leistungsstarke Anwendungen, bei denen Zuverlässigkeit, Haltbarkeit und Skalierbarkeit von entscheidender Bedeutung sind.
Series Name |
N5200 U.2 |
Standard & Interface |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
Package |
2.5” |
Connector |
SFF-8639 U.2 |
Outline Dimensions (L x W x H) |
100.2mm x 69.85mm x 15mm |
Flash Type |
3D NAND eTLC |
Density Range |
1.92 TB, 3.84 TB, 7.68 TB |
Endurance [DWPD] |
> 1.0 for 5 years |
Operating Temperature |
0°C to +70°C |
Storage Temperature |
-40°C to +85°C |
Performance |
Sequential data rates of up to 7,000 MB/s read and 4,200 MB/s write (sustained)
|
Voltage |
VCC: 12V (+/-10%) |
Average Power |
14.5 W |
DRAM |
DDR4 DRAM |
MTBF |
> 2,500,000 hours |
Data Reliability |
< 1 sector per 10^17 bits |
Features & Tools |
OCP NVMe Cloud SSD Specification 1.0 support |
Features
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.
Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.