PCIe 2.5データセンター向けSSD
D1200
- データセンター向け SSD U.3（15 mm）PCIe Gen4x4、NVMe 1.4インターフェイス
- デバイス容量 8TBおよび16TB
- シーケンシャルリード(最大)6,900 MB/秒、ランダムリード4K(最大)1,600k IOPS
- シーケンシャルライト(最大)7,000 MB/秒、ランダムライト4K(最大) 900k IOPS（16TB）
- 最大128のマルチネームスペースをサポート
- 高耐久性1.5 DWPD
- JEDEC エンタープライズワークロードでの5年間の寿命
- AES 256 データ暗号化と暗号消去
- powersafe: 電断保護
N4200
- 2.5インチU.3フォームファクタ（U.2との下位互換性あり）
- 8TB使用可能、16TB使用可能、エンタープライズグレードeTLC 3D NAND
- PCIe Gen4.0 / NVMe 1.4 / 4レーン
- シーケンシャルリード：最大7,000MB／秒
- シーケンシャルライト：最大4,000MB／秒
- モジュラー方式のフラッシュ・ファームウェア・アーキテクチャ
- お客様のワークロードに合わせたファームウェアの最適化
- 高信頼性
- 性能およびレイテンシのためのQoS：混在する複雑なワークロードの寿命を通して、一貫した性能およびレイテンシを維持
新製品D1200シリーズ PCIe/NVMe SSDは、高性能フラッシュストレージソリューションにおける革命的なストレージデバイスです。データセンターSSDは、データベース、データストレージ、クラウドコンピューティング、人工知能などのI/O集中型データセンターアプリケーションに、高い信頼性、究極のパフォーマンス、低消費電力が求められD1200はこれらに対応します。シーケンシャルおよびランダムライトパフォーマンスを向上させる拡張機能セットにより、データセンターの運用において最高効率が保証されます。
サーバエンジニアは、SwissbitのN4200データセンターSSDを使用して信頼性の高い大容量ストレージを実現することにより、一貫した高い性能と低いレイテンシを達成できます。 N4200は、各ワークロードを測定できます。 この独特の機能を生かしてワークロード特性を分析し、それに基づいてファームウェアを構成することにより、ウェブ、ストリーミング、アプリケーション、キャッシュサーバなど、具体的なワークロード特性に合わせて調整できます。 ワークロード特性に合わせて最適化されたファームウェアは、書き込み増幅を低く抑え、耐久性を向上させます。
|
Series Name |
D1200 |
N4200 |
|
Standard & Interface |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
|
Package |
2.5”, U.3 backwards compatible to U.2 |
2.5”, U.3 backwards compatible to U.2 |
| Connector |
SFF-8639 U.3 |
SFF-8639 U.3 |
|
Outline Dimensions (L x W x H) |
100.45mm x 69.85mm x 14.8mm | 100.4mm x 69.9mm x 14.8mm |
|
Flash Type |
3D NAND eTLC |
3D NAND eTLC |
|
Density Range |
7.68 TB, 15.36 TB |
7.68 TB, 15.36 TB |
|
Endurance [DWPD] |
> 1.5 for 5 years |
1 to 3 for 5 years |
|
Operating Temperature |
0°C to +70°C |
0°C to +70°C |
|
Storage Temperature |
-40°C to +85°C |
-40°C to +85°C |
|
Performance Clusters |
Optimized for highest system performance up to 900k IOPS and 7,000 MB/s |
Optimized for real world workloads seen in most common Datacenter application clusters |
|
Voltage |
VCC: 12V (-20%, +10%) |
VCC: 12V (±8%) |
|
Average Power |
16.3 W | 16.3 W |
|
DRAM |
DDR4 DRAM |
DDR4 DRAM |
|
MTBF |
> 2,000,000 hours |
> 2,000,000 hours |
|
Data Reliability |
< 1 sector per 10^17 bits |
< 1 sector per 10^17 bits |
| Features & Tools |
Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T., Telemetry) |
Modular flash SSD controller architecture designed specifically for the extreme workload demands of |
Enterprise 2.5‘‘ U.2 PCIe SSD
N5200 U.2
- Enterprise SSD U.2 (15mm) and E1.S (5.9mm/9.5mm/15mm enclosures available)
- Compliant to PCIe Gen 4x4 lanes, NVMe 1.4 interface
- User density 1.92TB, 3.84TB and 7.68TB
- Sequential data rates of up to 7,000 MB/s read and 4,200 MB/s write (sustained)
- Random data rates up to 1,350 kIOPS read and 450 kIOPS write (sustained)
- High endurance >1 DWPD, JEDEC enterprise workload over 5 years lifetime
- Multi-namespace support up to 128
- Powersafe: power fail protection
- Security and encryption: TCG OPAL 2.01 / AES256
The N5200 Gen4 PCIe U.2 SSD is optimized to serve the need for increasingly evolved storage for enterprise and edge data centers. The high performance SSD delivers a low KIOPS/watt performance while supporting excellent Quality of Service (QoS). Furthermore, the N5200 supports a wide range of features for modern enterprise data centers, including hardware-based security, advanced telemetry, data path and power failure protection. This make it an ideal choice for high-performance and mission-critical applications where reliability, durability, and scalability are essential.
|
Series Name |
N5200 U.2 |
|
Standard & Interface |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
|
Package |
2.5” |
| Connector |
SFF-8639 U.2 |
|
Outline Dimensions (L x W x H) |
100.2mm x 69.85mm x 15mm |
|
Flash Type |
3D NAND eTLC |
|
Density Range |
1.92 TB, 3.84 TB, 7.68 TB |
|
Endurance [DWPD] |
> 1.0 for 5 years |
|
Operating Temperature |
0°C to +70°C |
|
Storage Temperature |
-40°C to +85°C |
|
Performance |
Sequential data rates of up to 7,000 MB/s read and 4,200 MB/s write (sustained)
|
|
Voltage |
VCC: 12V (+/-10%) |
|
Average Power |
14.5 W |
|
DRAM |
DDR4 DRAM |
|
MTBF |
> 2,500,000 hours |
|
Data Reliability |
< 1 sector per 10^17 bits |
| Features & Tools |
OCP NVMe Cloud SSD Specification 1.0 support |
特徴とスペック
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.
Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.