Enterprise 2.5‘‘ U.2 PCIe SSD
D2200 U.2
- Enterprise SSD U.2 (15mm)
- Compliant to PCIe Gen 5 x4 lanes, NVMe 2.0b interface
- User density 7.68TB , 15.4 and 30.7 TB
- Sequential data rates of up to 14,000 MB/s read and 10,000 MB/s write (sustained)
- Random data rates up to 2.600 kIOPS read and 510 kIOPS write (sustained)
- High endurance 1.5 DWPD, JEDEC enterprise workload over 5 years lifetime
- Multi-namespace support up to 128, EUI64/NGUID
- Powersafe: power fail protection
- Security and encryption: AES-XTS 256, Crypto Erase, Secure Boot
The Gen 5 PCIe family D2200 is engineered for superior performance and reliability in data centers and enterprise environments. The D2200 sets a new standard for next generation connectivity, providing the best IOPS/watt performance, low latency and cutting-edge safety and security features. Backend by our commitment to exceptional customer service, we ensure seamless integration and direct support for your business needs. Experience the future of connectivity with the D2200 solution, tailored to meet the demands of high-performance applications and enabling your business to thrive in today’s rapidly evolving digital landscape.
|
Series Name |
D2200 U.2 |
|
Standard & Interface |
PCIe Gen 5.0 / NVMe 2.0b, x4 lanes |
|
Package |
2.5” |
| Connector |
SFF-8639 U.2 |
|
Outline Dimensions (L x W x H) |
100.2mm x 69.85mm x 15mm |
|
Flash Type |
3D NAND eTLC |
|
Density Range |
7.68 TB, 15.4 TB, 30.7 TB |
|
Endurance [DWPD] |
1.5 for 5 years |
|
Operating Temperature |
0°C to +70°C |
|
Storage Temperature |
-40°C to +85°C |
|
Sustained Performance Sequential Read Sequential Write Random Read Random Write |
up to 14,000 MB/s up to 10,000 MB/s up to 2,600 KIOPS up to 510 KIOPS |
|
Voltage |
VCC: 12 V (-20%, +10%) |
|
Average Power |
19.5 W |
|
DRAM |
DDR4 DRAM |
|
MTBF |
> 2,000,000 hours |
|
Data Reliability |
< 1 sector per 10^17 bits |
| Features & Tools |
powersafe™ Functionality |
特徴とスペック
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The product designs are in line with the latest regulations for electrostatic discharge and electromagnetic interference. Swissbit strives to exceed these limits with our own in-house technology and production capabilities, for example with System-in-Package (SiP) competence.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.