Enterprise 2.5‘‘ U.2 PCIe SSD
D2200 U.2
- Enterprise SSD U.2 (15mm)
- Compliant to PCIe Gen 5 x4 lanes, NVMe 2.0b interface
- User density 7.68TB and 15.4TB
- Sequential data rates of up to 14,000 MB/s read and 10,000 MB/s write (sustained)
- Random data rates up to 2.600 kIOPS read and 510 kIOPS write (sustained)
- High endurance 1 DWPD, JEDEC enterprise workload over 5 years lifetime
- Multi-namespace support up to 128, EUI64/NGUID
- Powersafe: power fail protection
- Security and encryption: AES-XTS 256, Crypto Erase, Secure Boot
N5200 U.2
- Enterprise SSD U.2 (15mm) and E1.S (5.9mm/9.5mm/15mm enclosures available)
- Compliant to PCIe Gen 4x4 lanes, NVMe 1.4 interface
- User density 1.92TB, 3.84TB and 7.68TB
- Sequential data rates of up to 7,000 MB/s read and 4,200 MB/s write (sustained)
- Random data rates up to 1,350 kIOPS read and 450 kIOPS write (sustained)
- High endurance >1 DWPD, JEDEC enterprise workload over 5 years lifetime
- Multi-namespace support up to 128
- Powersafe: power fail protection
- Security and encryption: TCG OPAL 2.01 / AES256
The Gen 5 PCIe family D2200 is engineered for superior performance and reliability in data centers and enterprise environments. The D2200 sets a new standard for next generation connectivity, providing the best IOPS/watt performance, low latency and cutting-edge safety and security features. Backend by our commitment to exceptional customer service, we ensure seamless integration and direct support for your business needs. Experience the future of connectivity with the D2200 solution, tailored to meet the demands of high-performance applications and enabling your business to thrive in today’s rapidly evolving digital landscape.
The N5200 Gen4 PCIe U.2 SSD is optimized to serve the need for increasingly evolved storage for enterprise and edge data centers. The high performance SSD delivers a low KIOPS/watt performance while supporting excellent Quality of Service (QoS). Furthermore, the N5200 supports a wide range of features for modern enterprise data centers, including hardware-based security, advanced telemetry, data path and power failure protection. This make it an ideal choice for high-performance and mission-critical applications where reliability, durability, and scalability are essential.
|
Series Name |
D2200 U.2 |
N5200 U.2 |
|
Standard & Interface |
PCIe Gen 5.0 / NVMe 2.0b, x4 lanes |
PCIe Gen 4.0 / NVMe 1.4, x4 lanes |
|
Package |
2.5” |
|
| Connector |
SFF-8639 U.2 |
|
|
Outline Dimensions (L x W x H) |
100.2mm x 69.85mm x 15mm | |
|
Flash Type |
3D NAND eTLC |
|
|
Density Range |
7.68 TB, 15.4 TB |
1.92 TB, 3.84 TB, 7.68 TB |
|
Endurance [DWPD] |
1.0 for 5 years |
1.5 for 5 years |
|
Operating Temperature |
0°C to +70°C |
|
|
Storage Temperature |
-40°C to +85°C |
|
|
Sustained Performance Sequential Read Sequential Write Random Read Random Write |
up to 14,000 MB/s up to 10,000 MB/s up to 2,600 KIOPS up to 510 KIOPS |
Up to 7,100 MB/s Up to 4,200 MB/s Up to 1,150 KIOPS Up to 950 KIOPS |
|
Voltage |
VCC: 12 V (-20%, +10%) |
VCC: 12V (+/-10%) |
|
Average Power |
19.5 W | 14.5 W |
|
DRAM |
DDR4 DRAM |
|
|
MTBF |
> 2,000,000 hours |
> 2,500,000 hours |
|
Data Reliability |
< 1 sector per 10^17 bits |
|
| Features & Tools |
powersafe™ Functionality |
OCP NVMe Cloud SSD Specification 1.0 support |
特徴とスペック
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The product designs are in line with the latest regulations for electrostatic discharge and electromagnetic interference. Swissbit strives to exceed these limits with our own in-house technology and production capabilities, for example with System-in-Package (SiP) competence.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.