作为值得信赖的合作伙伴，Swissbit 在工业、安全和物联网应用中可靠地存储和保护数据，从而为打造数字化和互联世界提供支持。Swissbit 开发并制造真正的“德国制造”工业存储和安全产品，这些产品具有长期可用性、高可靠性、自定义优化和较低的总拥有成本。
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全新的 S-600 系列采用了真正的 SLC NAND，为关键工业应用提供极高的可靠性和无与伦比的数据保留时间
Swissbit 推出了全新的基于 SLC 闪存的次世代 S-600 系列 SD 和 microSD 卡，尽管许多制造商从他们的产品线中取消了采用 SLC NAND 的存储卡。在可靠性、数据完整性和数据保留时间方面，每个单元仅存储一位的技术仍然是最佳的。只有 SLC 能够达到 100,000 次 P/E 周期（编程/擦除周期），这使其非常适合于需要极端稳健耐用存储解决方案的应用。具有高性能系统架构的 S-600 采用了海派世通（Hyperstone）专为工业闪存卡设计的全新 S9 控制器。
SD Memory Card Design-in
Swissbit has been one of the leading suppliers of SD Memory Cards for industrial use as well as for the automotive industry for many years.
This TechNote was created from this experience. It focuses on the most common problems that may occur during the integration of an SD Memory interface and is intended to serve as guide to avoid these problems.
Power Failure Testing
A sudden power failure can lead to various problems with flash media, resulting in a total failure, which is the worst case. This can be remedied by storage media that can still write all the data in the cache to the flash, recognizable by the addition PLP (Power Loss Protection).
But how to test the robustness against sudden power failures as part of product qualification? Our latest TechNote gives a detailed insight and provides an instruction for building your own test hardware.
Whether a flash storage medium is suitable for the intended use case can be determined in advance using the data sheet. Depending on the manufacturer, however, different test methods are used, which means that the resulting values are not always easy to compare with products from other manufacturers.
The typical methods, programs and terms that are used for such measurements are explained in this TechNote to provide a way to better compare the characteristics of different SSDs and match them with the intended use.
NAND Flash Endurance Testing
Typical application scenarios for NAND flash memory assume a service life of 3–5 years and in some cases even significantly longer. The flash type to be used (SLC, pSLC, MLC, TLC, QLC) is selected accordingly, which has the necessary endurance, i. e. the lifespan measured in erase and programming cycles.
If the specified endurance is to be checked as part of the qualification of a NAND flash memory for a project, the rate of aging has a significant influence on the result.
The presence of factory bad blocks in NAND flash is as much a technology reason as the occurrence of additional bad blocks during the lifetime.
Both are no (negative) quality indications.
However, with the occurrence of bad blocks during the lifetime, the correct handling of these events by the firmware is critical in order not to lose the new data as well as the already stored data of such blocks.
To compare speed specifications in data sheets of NAND flash memory media, the test conditions must be identical. If the measurement was not started repeatedly or did not cover the entire logical address space, the specified speed can be significantly higher than the real achievable speed.
Unlike hard drives or NOR flash, NAND flash does not have a fixed mapping of logical memory addresses to physical memory addresses.
The assignment takes place via mapping tables, which are managed by the firmware of the storage medium.