CFast™ 卡

CFast™卡将 CompactFlash™ (CF) 卡的外形规格与串行 ATA (SATA) 接口结合到一款产品之中。在要求小尺寸、高耐久性、耐冲击性、耐振动性、耐极端温度能力(-40°C 至 +85°C)和恶劣环境条件的应用中,CFast™ 卡可同时取代 HDD 和 CompactFlash™ 卡。Swissbit 的 CFast™ 卡为嵌入式和工业系统提供了坚固且易于更换的存储产品。Swissbit CFast™ 卡产品组合中包含多款产品,从基于单层单元的高端 F 600。现提供广泛的 CFast 卡产品组合,适用于不同应用需求,且均具有丰富 功能,可满足 Swissbit 高品质要求。

Series Name

F-800 F-86 F-600 F-66 / F-60 F-56 / F-50


Data Transfer Mode

CFast™ 2.0 – SATA III – 6 Gbit/s


CFast™ Type I

Outline Dimensions

36.4 x 42.8 x 3.6 mm

Flash Type


Density Range

2 GB-64 GB 10 GB - 160 GB 8 GB – 64 GB 4 GB – 120 GB /
8 GB - 240 GB
4 GB – 128 GB /
8 GB – 256 GB



Data Retention

10 years @ life begin
1 year @ life end

Endurance [DWPD]

JESD219 Client Endurance Workload

29 11.9 33.8 13.2 / 1.98 7.98 / 1.50

Operating Temperature

Commercial: 0°C to +70°C
Industrial: -40°C to +85°C

Storage Temperature

-40°C to +100°C

Sequential Read (MB/s)
Sequential Write (MB/s)
Random 4KB Read (IOPS)
Random 4KB Write (IOPS)

up to 320
up to 168
up to 10.5k
up to 7.2k

up to 375
up to 236
up to 12.5k
up to 8.5k
up to 520
up to 245
up to 76k
up to 54k
up to 520 / 520
up to 415 / 180
up to 80k / 72k
up to 75k / 43k
up to 510 / 500
up to 415 / 330
up to 32k / 53,5k
up to 66k / 74k


≥ 2,000,000 hours


500 G, 0.5 ms duration, half-sine wave 1,500 G, 0.5 ms duration, half-sine wave 500 G, 1 ms duration, half-sine wave


20 G, 80-2,000 Hz 50 G, 80-2,000 Hz 20 G, 80-2,000 Hz


85 % RH 85°C, 1,000 hrs


3.3 V ± 5 %

Power Consumption

Read (Active)
Write (Active)

1.3 W
1.1 W
200 mW
50 mW

1.25 W
0.95 W
200 mW
50 mW

1.6 W
2.4 W
347 mW
115 mW
1.4 W
1.8 W
380 mW
116 mW
1.2 W
2.1 W
248 mW
17 mW

Features & Tools

Advanced Wear Leveling & Bad Block management
In-field firmware update
SBLTM Tool & SDK for S.M.A.R.T. based Life Time Monitoring
AES 256 Encryption (optional)

Proven Power Fail Safety
DRAM supported FTL
Advanced Wear Leveling & Bad Block management
In-field firmware update
SBLTM Tool & SDK for S.M.A.R.T. based Life Time Monitoring
F-6x: AES 256 Encryption (optional)

Data care management
Data Care Management

Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.

Electrostatic discharge and electromagnetic interference
ESD and EMI safe

The product designs are in line with the latest regulations for electrostatic discharge and electromagnetic interference. Swissbit strives to exceed these limits with our own in-house technology and production capabilities, for example with System-in-Package (SiP) competence.

Life Time Monitoring (LTM)
Life time monitoring (LTM)

The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.

Power Fail Protection & Recovery
Power fail protection

Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.

Read-only optimized
Read-only optimized

In many industrial applications the data is written to the NAND Flash once and is only read afterwards. For such cases, the firmware can be optimized in order to guarantee the highest possible data retention and less read disturb.

Secure erase
Secure erase (Sanitize / Purge) / Fast erase

This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.

Shock & Vibration
Shock and vibration

Robustness is one of our key specification targets. The design, assembly and use of selected materials guarantee an extremely solid design which has been validated by extensive testing.

Temperature sensor
Temperature sensor

The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.

TRIM support
Trim support

The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.

Write Amplification Factor
WAF reduction

The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.

Wear leveling
Wear leveling

Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.

Wide temperature support
Wide temperature support

Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).