CFast™ SATAカード

CFast™カードは、CompactFlash™(CF)カードのフォームファクタとSerial ATA(SATA)インターフェースを1つの製品に統合したものです。CFast™カードは、小型フォームファクタ、高い耐久性、および衝撃、振動、極端な温度(-40°C~+85°C)、過酷な環境条件への耐性が求められる用途において、HDDやCompactFlash™カードに代わるストレージです。SwissbitのCFast™カード製品ラインナップは、ハイエンドのSLCベースの高性能モデル「F-600」から、コストパフォーマンスに優れた3D NANDモデル「F-75」まで幅広くカバーしています。各製品ファミリーは豊富な機能を備え、Swissbitの高い品質要件を満たしています。

Performance
F-75F-78F-600F-66F-60F-800F-86F-56F-50
Series Name
F-75
F-78
F-600
F-66
F-60
F-800
F-86
F-56
F-50
Standards / Compliance
CFast™ 2.0
CFast™ 2.0
CFast™ 2.0
CFast™ 2.0
CFast™ 2.0
CFast™ 2.0
CFast™ 2.0
CFast™ 2.0
CFast™ 2.0
Interface / Protocol
SATA Gen 3 / ATA8
SATA Gen 3 / ATA8
SATA Gen 3 / ATA8
SATA Gen 3 / ATA8
SATA Gen 3 / ATA8
SATA Gen 3 / ATA8
SATA Gen 3 / ATA8
SATA Gen 3 / ATA8
SATA Gen 3 / ATA8
Outline Dimensions (LxWxH)
36.4 x 42.8 x 3.6 mm
36.4 x 42.8 x 3.6 mm
36.4 x 42.8 x 3.6 mm
36.4 x 42.8 x 3.6 mm
36.4 x 42.8 x 3.6 mm
36.4 x 42.8 x 3.6 mm
36.4 x 42.8 x 3.6 mm
36.4 x 42.8 x 3.6 mm
36.4 x 42.8 x 3.6 mm
Flash Type
3D TLC
3D pSLC
SLC
pSLC
MLC
SLC
3D pSLC
pSLC
MLC
Density Range
32–512 GB
32–128 GB
4-64 GB
4-120 GB
8-240 GB
2-64 GB
10-160 GB
4-128 GB
8-256 GB
DRAM
DRAM Cache
DRAM Cache
DRAM Cache
DRAM Cache
DRAM Cache
no
no
no
no
Endurance [DWPD] Client WL or Random 128K
max. 1.79
up to 97.2
36.3
13.2
2.0
max. 32
max. 13.3
max. 7.98
max 1.61
Operating Temperature (ambient)
Commercial: 0°C to +70°C Industrial: -40°C to +85°C
Commercial: 0°C to +70°C Industrial: -40°C to +85°C
Commercial: 0°C to +70°C Industrial: -40°C to +85°C
Commercial: 0°C to +70°C Industrial: -40°C to +85°C
Commercial: 0°C to +70°C Industrial: -40°C to +85°C
Commercial: 0°C to +70°C Industrial: -40°C to +85°C
Commercial: 0°C to +70°C Industrial: -40°C to +85°C
Commercial: 0°C to +70°C Industrial: -40°C to +85°C
Commercial: 0°C to +70°C Industrial: -40°C to +85°C
Data Retention
10 years @ life begin 1 year @ life end
10 years @ life begin 1 year @ life end
10 years @ life begin 1 year @ life end
10 years @ life begin 1 year @ life end
10 years @ life begin 1 year @ life end
10 years @ life begin 1 year @ life end
10 years @ life begin 1 year @ life end
10 years @ life begin 1 year @ life end
10 years @ life begin 1 year @ life end
Storage Temperature
-40°C to +100°C
-40°C to +100°C
-40°C to +100°C
-40°C to +100°C
-40°C to +100°C
-40°C to +100°C
-40°C to +100°C
-40°C to +100°C
-40°C to +100°C
MTBF
≥ 2,000,000 hours
≥ 2,000,000 hours
≥ 2,000,000 hours
≥ 2,000,000 hours
≥ 2,000,000 hours
≥ 2,000,000 hours
≥ 2,000,000 hours
≥ 2,000,000 hours
≥ 2,000,000 hours
Data Reliability
< 1 sector per 10^16 bits
< 1 sector per 10^16 bits
< 1 sector per 10^16 bits
< 1 sector per 10^16 bits
< 1 sector per 10^16 bits
< 1 sector per 10^16 bits
< 1 sector per 10^16 bits
< 1 sector per 10^16 bits
< 1 sector per 10^16 bits
Shock
500 G, 0.5 ms duration, half-sine wave
500 G, 0.5 ms duration, half-sine wave
1,500 G, 0.5 ms duration, half-sine wave
1,500 G, 0.5 ms duration, half-sine wave
1,500 G, 0.5 ms duration, half-sine wave
500 G, 0.5 ms duration, half-sine wave
500 G, 0.5 ms duration, half-sine wave
500 G, 0.5 ms duration, half-sine wave
500 G, 0.5 ms duration, half-sine wave
Vibration
20 G, 80-2,000 Hz
20 G, 80-2,000 Hz
50 G, 80-2,000 Hz
50 G, 80-2,000 Hz
50 G, 80-2,000 Hz
20 G, 80-2,000 Hz
20 G, 80-2,000 Hz
20 G, 80-2,000 Hz
20 G, 80-2,000 Hz
Humidity
85 % RH 85°C, 1,000 hrs
85 % RH 85°C, 1,000 hrs
85 % RH 85°C, 1,000 hrs
85 % RH 85°C, 1,000 hrs
85 % RH 85°C, 1,000 hrs
85 % RH 85°C, 1,000 hrs
85 % RH 85°C, 1,000 hrs
85 % RH 85°C, 1,000 hrs
85 % RH 85°C, 1,000 hrs
Voltages
3.3 V ± 5 %
3.3 V ± 5 %
3.3 V ± 5 %
3.3 V ± 5 %
3.3 V ± 5 %
3.3 V ± 5 %
3.3 V ± 5 %
3.3 V ± 5 %
3.3 V ± 5 %
Average Power
1.5 W
1.5 W
2.0 W
1.6 W
1.5 W
1.1 W
1.0 W
1.7 W
1.6 W
Features & Tools
Proven Power Fail Safety DRAM supported FTL 
Proven Power Fail Safety DRAM supported FTL 
Proven Power Fail Safety DRAM supported FTL 
Proven Power Fail Safety DRAM supported FTL 
Proven Power Fail Safety DRAM supported FTL 
Proven Power Fail Safety E2E Data Path Protection 
Proven Power Fail Safety E2E Data Path Protection 
Proven Power Fail Safety NCQ, TRIM 
Proven Power Fail Safety NCQ, TRIM 
Sequential Read (MB/s)
up to 550
up to 560
up to 520
up to 520
up to 520
up to 319
up to 372
up to 510
up to 500
Sequential Write (MB/s)
up to 172
up to 480
up to 245
up to 415
up to 180
up to 150
up to 223
up to 415
up to 330
Random 4KB Read (IOPS)
up to 53,600
up to 72,900
up to 76,000
up to 80,000
up to 72,000
up to 10,400
up to 16,300
up to 32,000
up to 53,500
Random 4KB Write (IOPS)
up to 39,500
up to 77,200
up to 54,000
up to 75,000
up to 43,000
up to 6,800
up to 10,100
up to 66,000
up to 74,000
F-600
Fact Sheet
F-66
Fact Sheet
F-60
Fact Sheet
F-800
Fact Sheet
F-86
Fact Sheet
F-56
Fact Sheet
F-50
Fact Sheet

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