Managed NAND BGAs are the smallest form factor to incorporate reliable and easy to interface storage on a system.
Swissbit offers the e.MMC version EM-20 and a new PCIe/NVMe BGA for this purpose.
The EM-20/EM-26 e.MMC fulfills the JEDEC 5.0 Standard and offers a reliable and stable storage product with true industrial operating temperature and a detailed life time monitoring.
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Series Name |
EM-20 |
EM-26 |
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Interface Data Transfer Mode |
e.MMC 1-bit, 4-bit, 8-bit up to HS400 |
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Package |
153-ball BGA, 0.5mm pitch |
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Outline Dimensions |
11.5mm x 13.0mm x 1mm |
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Flash Type |
MLC |
pSLC / enhanced mode |
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Density Range |
4 GB to 64 GB |
2 GB to 32 GB |
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Data Retention |
10 years @ life begin |
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Endurance |
3,000 P/E cycles MLC mode |
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|
Operating Temperature |
-40°C to +85°C |
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Storage Temperature |
-40°C to +85°C |
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Performance
Sequential Read (MB/s) Sequential Write (MB/s) Random 4KB Read (IOPS) Random 4KB Write (IOPS) |
up to 21 up to 3,800 up to 1,400 |
up to 120 up to 6,700 up to 6,700 |
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MTBF |
~20,000,000 hours |
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|
Voltage |
VCCQ: 1.70-1.95V / 2.70-3.60V ; VCC: 2.70-3.60 |
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Power Consumption |
Typ. Read Current: 180 mA @ 1.8V VCCQ, 38mA @ 3.3V VCC Typ. Write Current 105 mA @ 1.8V VCCQ, 80mA @ 3.3V VCC |
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Features & Tools |
High performance up to HS400 mode |
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Part Number |
SFEMxxxGB1EA1TO-I-xx-111-STD |
SFEMxxxGB1EA1TO-I-xx-111-Exx |
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).
The EN-20 is a PCIe 3.1 /NVMe 1.3 product with DRAM support and up to 4 lane operation mode offers both a high performance and short latency for modern applications. Data care management with background adaptive read refresh and media scan maintains the retention of the Flash blocks and enables long product utilization even for sparsely writing applications.
|
Series Name |
EN-20 |
|
Interface Data Transfer Mode |
PCIe 3.1 |
|
Package |
BGA 391 ball, 0.8mm pitch |
|
Outline Dimensions |
16mm x 20mm x 1.8mm |
|
Flash Type |
3D NAND |
|
Density Range |
15 GB to 240 GB |
|
Data Retention |
10 years @ life begin |
|
Endurance |
3,000 P/E cycles per Flash block |
|
Operating Temperature |
-40°C to +85°C |
|
Storage Temperature |
-40°C to +85°C |
|
Performance Burst Rate Sequential Read (MB/s) Sequential Write (MB/s) Random 4KB Read (IOPS Random 4KB Write (IOPS |
1,600 650 120,000 150,000 |
|
MTBF |
~3,000,000 hours |
|
Voltages |
3.3V, 1.8V, 0.9V |
|
Power Consumption |
Typ. Read Current: tbd Typ. Write Current tbd |
|
Features & Tools |
Dynamic and Static Wear Leveling |
|
Part Number |
SFENxxxxGBxEBxss-t-dd-rrr-ccc |
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).
