e.MMC
EM-30 / EM-36
- JEDEC e.MMC 5.1 Standard (JESD84-B50)
- 153-ball BGA, 0.5mm pitch 11.5 x 13mm
- 100-ball BGA, 1.0mm pitch 14.0 x 18mm
- Operational Temperature Range -40°C to 105°C
- Multiple partitions in 3D TLC and pSLC configurable (EM-30)
- Preconfigured in 100% pSLC mode (EM-36)
- AEC-Q100-2 automotive standard
- Read disturb managed
- Power fail protected
EM-20 / EM-26
- JEDEC e.MMC 5.0 Standard (JESD84-B50)
- 153-ball BGA, 0.5mm pitch 11.5 x 13mm
- Operational Temperature Range -40°C to 85°C
- Multiple partitions in MLC and pSLC configurable (EM-20)
- Preconfigured in 100% pSLC mode (EM-26)
- Read disturb managed
- Power fail protected
Small form factor embedded systems have often used NAND components, which were directly interfaced and managed by the host controller software. This task has become a challenge due to the increasing complexity of NAND devices and their management.
Managed NAND is the solution: a single small size BGA component incorporates multiple Flash dies, a NAND controller and the management firmware and eases the integration. Swissbit’s e.MMC EM-20 and EM-30 family covers multiple densities and interface speeds. Sophisticated NAND management makes the e.MMC ideal for applications like POS/POI, PLC, IoT, gaming, medical, or as a general boot medium for embedded applications. The EN-20 PCIe/NVMe BGA opens the door for high speed at small size.
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Series Name |
EM-30 |
EM-36 |
EM-20 |
EM-26 |
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Compliance |
JEDEC e.MMC 5.1 |
JEDEC e.MMC 5.0 |
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Interface Data Transfer Mode |
e.MMC 1-bit, 4-bit, 8-bit up to HS400 |
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Package |
153-ball BGA, 0.5mm pitch |
153-ball BGA, 0.5mm pitch |
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Max Outline Dimensions |
11.5mm x 13.0mm x 1.2mm |
11.5mm x 13.0mm x 1mm |
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Flash Type |
3D TLC |
3D pSLC / enhanced mode |
MLC |
pSLC / enhanced mode |
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Density Range |
16 GB to 256 GB |
5 GB to 80 GB |
4 GB to 64 GB |
2 GB to 32 GB |
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Data Retention |
10 years @ life begin |
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Endurance |
3,000 P/E cycles TLC mode |
3,000 P/E cycles MLC mode |
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Operating Temperature |
-40°C to +85°C |
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Storage Temperature |
-40°C to +85°C |
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Performance Sequential Read (MB/s) Sequential Write (MB/s) Random 4KB Read (IOPS) Random 4KB Write (IOPS) |
up to 300 up to 230 up to 39,500 up to 41,500 |
up to 300 up to 230 up to 39,500 up to 41,500 |
up to 175 up to 21 up to 3,800 up to 1,400 |
up to 240 up to 120 up to 6,700 up to 6,700 |
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Voltage |
VCCQ: 1.70-1.95V / 2.70-3.60V ; VCC: 2.70-3.60 |
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Power Consumption |
Typ. Read Current: 140 mA @ 1.8V VCCQ, 105 mA @ 3.3V VCC Typ. Write Current 100 mA @ 1.8V VCCQ, 105 mA @ 3.3V VCC |
Typ. Read Current: 180 mA @ 1.8V VCCQ, 38mA @ 3.3V VCC Typ. Write Current 105 mA @ 1.8V VCCQ, 80mA @ 3.3V VCC |
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Features & Tools |
High performance up to HS400 mode |
High performance up to HS400 mode Detailed block erase counter data via the Extended CSD Register |
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Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).
M.2 PCIe BGA
EN-20 / EN-26 M.2 PCIe
- PCIe M.2 1620 BGA
- PCIe Gen 3.1 / NVMe 1.3 4 lanes
- BGA, 0.8mm pitch 16 x 20mm
- 3D NAND TLC / pSLC
- Operational Temperature Range -40°C to 85°C
- Data Care Management
- Power fail protected
- AES 256 encryption
The EN-20 is a PCIe 3.1 /NVMe 1.3 product with DRAM support and up to 4 lane operation mode offers both a high performance and short latency for modern applications. Data care management with background adaptive read refresh and media scan maintains the retention of the Flash blocks and enables long product utilization even for sparsely writing applications.
For high endurance demand the EN-26 with 3D NAND pSLC offers tenfold higher endurance compared to EN-20.
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Series Name |
EN-20 | EN-26 |
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Interface Data Transfer Mode |
PCIe 3.1 |
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Package |
BGA 391 ball, 0.8mm pitch |
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Outline Dimensions |
16mm x 20mm x 1.8mm |
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Flash Type |
3D NAND TLC |
3D NAND pSLC |
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Density Range |
15 GB to 480 GB | 5 GB to 160 GB |
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Data Retention |
10 years @ life begin |
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Endurance |
3,000 P/E cycles per Flash block |
30,000 P/E cycles per Flash block |
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Operating Temperature |
-40°C to +85°C |
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Storage Temperature |
-40°C to +85°C |
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Performance Sequential Read (MB/s) Sequential Write (MB/s) Random 4KB Read (IOPS Random 4KB Write (IOPS |
1,775 750 140,000 112,000 |
1,781 758 140,000 136,000 |
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MTBF |
~3,000,000 hours |
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Voltages |
3.3V, 1.8V, 0.9V |
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Power Consumption |
Typ. Read Current: up to 2.2W Typ. Write Current: up to 1.6W Idle: 350mW PS4: 1.6mW |
Typ. Read Current: up to 2.2W Typ. Write Current: up to 1.9W Idle: 350mW PS4: 1.6mW |
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Features & Tools |
Dynamic and Static Wear Leveling |
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Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).