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e.MMC

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EM-30 / EM-36 e.MMC 5.1

  • JEDEC e.MMC 5.1 Standard (JESD84-B50)
  • 153-ball BGA, 0.5mm pitch 11.5 x 13mm
  • Operational Temperature Range -40°C to 85°C
  • Multiple partitions in 3D TLC and pSLC configurable (EM-30)
  • Preconfigured in 100% pSLC mode (EM-36)
  • High performance e.MMC 5.1 support
  • Read disturb managed
  • Power fail protected
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EM-20 / EM-26 e.MMC 5.0

  • JEDEC e.MMC 5.0 Standard (JESD84-B50)
  • 153-ball BGA, 0.5mm pitch 11.5 x 13mm
  • Operational Temperature Range -40°C to 85°C
  • Multiple partitions in MLC and pSLC configurable (EM-20)
  • Preconfigured in 100% pSLC mode (EM-26)
  • High performance e.MMC 5.0 support
  • Read disturb managed
  • Power fail protected
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Managed NAND BGAs are the smallest form factor to incorporate reliable and easy to interface storage on a system.
Swissbit offers the e.MMC versions EM-20 with JEDEC 5.0 Standard and the new EM-30 compliant to 5.1 Standard
All Swissbit e.MMC products are reliable and stable storage products with true industrial operating temperature and a detailed life time monitoring.

Series Name

EM-30

EM-36

EM-20

EM-26

Compliance

JEDEC e.MMC 5.1

JEDEC e.MMC 5.0

Interface

Data Transfer Mode

e.MMC 1-bit, 4-bit, 8-bit up to HS400

Package

153-ball BGA, 0.5mm pitch
Optional:
100-ball BGA, 1mm pitch

153-ball BGA, 0.5mm pitch

Max Outline Dimensions

 11.5mm x 13.0mm x 1.2mm

11.5mm x 13.0mm x 1mm

Flash Type

3D TLC

3D pSLC / enhanced mode

MLC

pSLC / enhanced mode

Density Range

16 GB to 256 GB

5 GB to 80 GB

4 GB to 64 GB

2 GB to 32 GB

Data Retention

10 years @ life begin
1 year @ life end

Endurance

3,000 P/E cycles TLC mode
30,000 P/E cycles enhanced mode
(Flash Cell Level)

3,000 P/E cycles MLC mode
20,000 P/E cycles enhanced mode
(Flash Cell Level)

Operating Temperature

-40°C to +85°C

Storage Temperature

-40°C to +85°C

Performance
sustained

Sequential Read (MB/s)

Sequential Write (MB/s)

Random 4KB Read (IOPS)

Random 4KB Write (IOPS)

 

up to 300

up to 230

up to 39,500

up to 41,500

 

up to 300

up to 230

up to 39,500

up to 41,500

 

up to 175

up to 21

up to 3,800

up to 1,400

 

up to 240

up to 120

up to 6,700

up to 6,700

Voltage

VCCQ: 1.70-1.95V / 2.70-3.60V ; VCC: 2.70-3.60

Power Consumption

Typ. Read Current: 140 mA @ 1.8V VCCQ, 105 mA @ 3.3V VCC

Typ. Write Current 100 mA @ 1.8V VCCQ, 105 mA @ 3.3V VCC

Typ. Read Current: 180 mA @ 1.8V VCCQ, 38mA @ 3.3V VCC

Typ. Write Current 105 mA @ 1.8V VCCQ, 80mA @ 3.3V VCC

Features & Tools

High performance up to HS400 mode
Sophisticated Wear Levelling & Read Disturb Management
Command Queue Feature
Production State Aware
Proven Power Fail Safety
Security features – secure erase & RPMB
Detailled life time info

High performance up to HS400 mode
Sophisticated Wear Levelling & Read Disturb Management
Page based FTL Management
Production State Aware
Proven Power Fail Safety
Security features – secure erase & RPMB

Detailed block erase counter data via the Extended CSD Register

 

Product Features

Data care management
Data Care Management

Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.

Life Time Monitoring (LTM)
Life time monitoring (LTM)

The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.

Power Fail Protection & Recovery
Power fail protection

Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.

Write Amplification Factor
WAF reduction

The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.

Wear leveling
Wear leveling

Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.

Wide temperature support
Wide temperature support

Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).

M.2 PCIe BGA

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EN-20 / EN-26 M.2 PCIe

  • PCIe M.2 1620 BGA
  • PCIe Gen 3.1 / NVMe 1.3  4 lanes
  • BGA, 0.8mm pitch 16 x 20mm
  • 3D NAND TLC / pSLC
  • Operational Temperature Range -40°C to 85°C
  • Data Care Management
  • Power fail protected
  • AES 256 encryption
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The EN-20 is a PCIe 3.1 /NVMe 1.3 product with DRAM support and up to 4 lane operation mode offers both a high performance and short latency for modern applications. Data care management with background adaptive read refresh and media scan maintains the retention of the Flash blocks and enables long product utilization even for sparsely writing applications.

For high endurance demand the EN-26 with 3D NAND pSLC offers tenfold higher endurance compared to EN-20.

Series Name

 EN-20 EN-26

Interface

Data Transfer Mode

PCIe 3.1
NVMe 1.3

Package

BGA 391 ball, 0.8mm pitch

Outline Dimensions

16mm x 20mm x 1.8mm

Flash Type

3D NAND TLC

3D NAND pSLC

Density Range

 15 GB to 480 GB 5 GB to 160 GB

Data Retention

10 years @ life begin
1 year @ life end

Endurance

3,000 P/E cycles per Flash block

30,000 P/E cycles per Flash block

Operating Temperature

-40°C to +85°C

Storage Temperature

-40°C to +85°C

Performance

Sequential Read (MB/s)

Sequential Write (MB/s)

Random 4KB Read (IOPS

Random 4KB Write (IOPS

 

1,770

720

140,000

100,000

 

1,770

720

140,000

100,000

MTBF

~3,000,000 hours

Voltages

3.3V, 1.8V, 0.9V

Power Consumption

Typ. Read Current: up to 2W

Typ. Write Current: up to 1.3W

Idle: 350mW

PS4: 1.6mW

Typ. Read Current: up to 2W

Typ. Write Current: up to 1.54W

Idle: 350mW

PS4: 1.6mW

Features & Tools

Dynamic and Static Wear Leveling
Page Mode Flash Translation Layer (FTL)
Data Care Management
Write Amplification Reduction
Power Fail Data Loss Protection
In-Field Firmware Update
Self-Monitoring, Analysis, and Reporting Technology (S.M.A.R.T.)
AES256 Encryption
HMB Support

 

Product Features

Data care management
Data Care Management

Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.

Life Time Monitoring (LTM)
Life time monitoring (LTM)

The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.

Power Fail Protection & Recovery
Power fail protection

Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.

Secure erase
Secure erase (Sanitize / Purge) / Fast erase

This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.

Temperature sensor
Temperature sensor

The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.

TRIM support
Trim support

The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.

Write Amplification Factor
WAF reduction

The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.

Wear leveling
Wear leveling

Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.

Wide temperature support
Wide temperature support

Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).