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e.MMC

EM-30 / EM-36 e.MMC 5.0

  • e.MMC JEDEC 5.1 Standard (JESD84-B50)
  • 153 Ball BGA, Rastermaß 0,5 mm
  • 11,5 x13 mm
  • Betriebstemperaturbereich: -40 °C bis 85 °C
  • Mehrere Partitionen in 3D TLC und pSLC konfigurierbar (EM-30)
  • Im 100%-pSLC vorkonfiguriert (EM-36)
  • Unterstützung von Hochleistungs-e.MMC 5.1
  • Lesestörungsmanagement
  • Stromausfallschutz
Online kaufen

EM-20 / EM-26 e.MMC 5.0

  • e.MMC JEDEC 5.0 Standard (JESD84-B50)
  • 153 Ball BGA, Rastermaß 0,5 mm
  • 11,5 x13 mm
  • Betriebstemperaturbereich: -40 °C bis 85 °C
  • Mehrere Partitionen in MLC und pSLC konfigurierbar (EM-20)
  • Im 100% pSLC vorkonfiguriert (EM-26)
  • Unterstützung von Hochleistungs-e.MMC 5.0
  • Lesestörungsmanagement
  • Stromausfallschutz
Online kaufen


BGAs mit Managed NAND sind der kleinste Formfaktor, mit dem sich zuverlässige und schnittstellenfreundliche Datenspeicher in ein System integrieren lassen.
Swissbit bietet hierfür die e.MMC-Versionen EM-20 nach JEDEC 5.0 Standard und die neue EM-30 gemäss 5.1 Standard.
Alle Swissbit e.MMC Produkte sind zuverlässige und haltbare Speichermedium mit einem wahrhaft industrietauglichen Betriebstemperaturbereich und einem detaillierten Lebensdauer-Monitoring.

Series Name

EM-30

EM-36

EM-20

EM-26

Compliance

JEDEC e.MMC 5.1

JEDEC e.MMC 5.0

Interface

Data Transfer Mode

e.MMC 1-bit, 4-bit, 8-bit up to HS400

Package

153-ball BGA, 0.5mm pitch
Optional:
100-ball BGA, 1mm pitch

153-ball BGA, 0.5mm pitch

Max Outline Dimensions

 11.5mm x 13.0mm x 1.2mm

11.5mm x 13.0mm x 1mm

Flash Type

3D TLC

3D pSLC / enhanced mode

MLC

pSLC / enhanced mode

Density Range

16 GB to 256 GB

5 GB to 80 GB

4 GB to 64 GB

2 GB to 32 GB

Data Retention

10 years @ life begin
1 year @ life end

Endurance

3,000 P/E cycles TLC mode
30,000 P/E cycles enhanced mode
(Flash Cell Level)

3,000 P/E cycles MLC mode
20,000 P/E cycles enhanced mode
(Flash Cell Level)

Operating Temperature

-40°C to +85°C

Storage Temperature

-40°C to +85°C

Performance
sustained

Sequential Read (MB/s)

Sequential Write (MB/s)

Random 4KB Read (IOPS)

Random 4KB Write (IOPS)

 

up to 300

up to 230

up to 39,500

up to 41,500

 

up to 300

up to 230

up to 39,500

up to 41,500

 

up to 175

up to 21

up to 3,800

up to 1,400

 

up to 240

up to 120

up to 6,700

up to 6,700

Voltage

VCCQ: 1.70-1.95V / 2.70-3.60V ; VCC: 2.70-3.60

Power Consumption

Typ. Read Current: 140 mA @ 1.8V VCCQ, 105 mA @ 3.3V VCC

Typ. Write Current 100 mA @ 1.8V VCCQ, 105 mA @ 3.3V VCC

Typ. Read Current: 180 mA @ 1.8V VCCQ, 38mA @ 3.3V VCC

Typ. Write Current 105 mA @ 1.8V VCCQ, 80mA @ 3.3V VCC

Features & Tools

High performance up to HS400 mode
Sophisticated Wear Levelling & Read Disturb Management
Command Queue Feature
Production State Aware
Proven Power Fail Safety
Security features – secure erase & RPMB
Detailled life time info

High performance up to HS400 mode
Sophisticated Wear Levelling & Read Disturb Management
Page based FTL Management
Production State Aware
Proven Power Fail Safety
Security features – secure erase & RPMB

Detailed block erase counter data via the Extended CSD Register
Data care management
Data Care Management

Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.

Life Time Monitoring (LTM)
Life time monitoring (LTM)

The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.

Power Fail Protection & Recovery
Power fail protection

Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.

Write Amplification Factor
WAF reduction

The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.

Wear leveling
Wear leveling

Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.

Wide temperature support
Wide temperature support

Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).