e.MMC
EM-30 / EM-36
- e.MMC JEDEC 5.1 Standard (JESD84-B50)
- 153 Ball BGA, Rastermaß 0,5 mm, 11,5 x13 mm
- 100-ball BGA, 1.0mm pitch 14.0 x 18mm
- Betriebstemperaturbereich: -40 °C bis 105 °C
- Mehrere Partitionen in 3D TLC und pSLC konfigurierbar (EM-30)
- Im 100%-pSLC vorkonfiguriert (EM-36)
- AEC-Q100-2 automotive standard
- Lesestörungsmanagement
- Stromausfallschutz
EM-20 / EM-26
- e.MMC JEDEC 5.0 Standard (JESD84-B50)
- 153 Ball BGA, Rastermaß 0,5 mm, 11,5 x13 mm
- Betriebstemperaturbereich: -40 °C bis 85 °C
- Mehrere Partitionen in MLC und pSLC konfigurierbar (EM-20)
- Im 100% pSLC vorkonfiguriert (EM-26)
- Lesestörungsmanagement
- Stromausfallschutz
Eingebettete Systeme mit kleinem Formfaktor haben häufig NAND-Komponenten verwendet, die direkt mit der Host-Controller-Software verbunden und verwaltet wurden. Diese Aufgabe ist aufgrund der zunehmenden Komplexität von NAND-Geräten und deren Verwaltung zu einer Herausforderung geworden.
Managed NAND ist die Lösung: Eine einzige kleine BGA-Komponente enthält mehrere Flash-Chips, einen NAND-Controller und die Management-Firmware und vereinfacht die Integration. Die e.MMC EM-20- und EM-30-Familie von Swissbit deckt mehrere Kapazitäten und Schnittstellengeschwindigkeiten ab. Das ausgeklügelte NAND-Management macht das e.MMC ideal für Anwendungen wie POS/POI, SPS, IoT, Gaming, Medizin oder als allgemeines Boot-Medium für eingebettete Anwendungen. Das EN-20 PCIe/NVMe BGA öffnet die Tür für hohe Geschwindigkeit bei kleiner Größe.
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Series Name |
EM-30 |
EM-36 |
EM-20 |
EM-26 |
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Compliance |
JEDEC e.MMC 5.1 |
JEDEC e.MMC 5.0 |
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Interface Data Transfer Mode |
e.MMC 1-bit, 4-bit, 8-bit up to HS400 |
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Package |
153-ball BGA, 0.5mm pitch |
153-ball BGA, 0.5mm pitch |
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Max Outline Dimensions |
11.5 x 13 x 1.2 mm 14.0 x 18 x 1.4 mm |
11.5 x 13.0 x 1.0 mm |
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Flash Type |
3D TLC |
3D pSLC / enhanced mode |
MLC |
pSLC / enhanced mode |
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Density Range |
4-256 GB |
5-80 GB |
4-64 GB |
2-32 GB |
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Data Retention |
10 years @ life begin |
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Endurance |
3k @ TLC mode |
3k @ MLC mode |
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Operating Temperature |
Industrial: -40°C to +85°C |
Industrial: -40°C to +85°C |
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Storage Temperature |
-40°C to +85°C |
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Performance Sequential Read (MB/s) |
up to 320 up to 241 up to 4,610 up to 2,910 |
up to 330 up to 253 up to 4,550 up to 2,910 |
up to 175 |
up to 240 up to 120 up to 6,700 up to 6,700 |
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Voltage |
VCCQ: 1.70-1.95V / 2.70-3.60V ; VCC: 2.70-3.60 |
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Features & Tools |
High performance up to HS400 mode AEC-Q Grade 2, ISO 27001, IATF 16949 |
High performance up to HS400 mode Detailed block erase counter data via the Extended CSD Register |
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Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).
M.2 PCIe BGA
EN-20 / EN26 M.2 PCIe
- PCIe M.2 1620 BGA
- PCIe Gen 3.1 / NVMe 1.3, 4 Lanes
- 291 Ball BGA; 0,8-mm-Raster 16 x 20 mm
- 3D-NAND TLC / pSLC
- Betriebstemperaturbereich: -40 °C bis 85 °C
- Datenpflegemanagement
- Schutz vor Datenverlust bei Stromausfall
- AES-256-Verschlüsselung
Die EN-20 ist ein Produkt mit PCIe 3.1 / NVMe 1.3, DRAM-Support und einem Betriebsmodus mit bis zu 4 Lanes. Sie bietet sowohl eine hohe Leistung als auch eine kurze Latenz für zeitgemäße Anwendungen. Das Datenpflegemanagement mit adaptivem Read-Refresh und Medien-Scan im Hintergrund sorgt für die Stabilität der Flash-Blöcke und ermöglicht selbst bei geringer Schreibhäufigkeit eine lange Nutzungsdauer.
Bei höheren Lebensdauernaforderungen bietet sich die EN-26 mit 3D NAND pSLC Technologie an, die gegenüber der EN-20 eine 10-fach höhere Schreibmenge erlaubt.
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Series Name |
EN-20 | EN-26 |
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Interface Data Transfer Mode |
PCIe Gen 3.1, 4 PCIe lanes |
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Package |
BGA 391 ball, 0.8mm pitch |
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Outline Dimensions |
16mm x 20mm x 1.8mm |
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Flash Type |
3D NAND TLC |
3D NAND pSLC |
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Density Range |
15-480 GB | 5-160 GB |
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Data Retention |
10 years @ life begin |
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Endurance |
3,000 P/E cycles per Flash block |
30,000 P/E cycles per Flash block |
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Operating Temperature |
-40°C to +85°C (up to 95°C TCase) |
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Storage Temperature |
-40°C to +85°C |
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Performance Sequential Read (MB/s) |
up to 1,770 up to 720 up to 150,000 up to 100,000 |
up to 1,770 up to 720 up to 150,000 up to 100,000 |
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MTBF |
~3,000,000 hours |
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Voltages |
3.3V ±5%, 1.8V ±5%, 0.9V ±5% | |
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Features & Tools |
HMB support |
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Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).