スモール フォーム ファクターの組み込みシステムでは、ホスト コントローラー ソフトウェアによって直接インターフェイスおよび管理される NAND ICがよく使用されてきました。 最新のNAND フラッシュではデータ管理要件が複雑になっているため、このタスクは課題となっています。
マネージド NAND がその解決方法になります。単一の小型 BGA コンポーネントに複数のフラッシュチップ、NAND コントローラー、管理ファームウェアが組み込まれており、構成と管理がを容易に実現できます。 Swissbit の e.MMC EM-20 および EM-30 ファミリは、幅広い製品容量とインターフェイス速度をカバーします。 高度な NAND 管理により、e.MMC は POS/POI、PLC、IoT、ゲーム、医療などのアプリケーション、または組み込みアプリケーションの一般的なブート メディアとして最適です。 EN-20 PCIe/NVMe BGA は、小型サイズでの高速化への扉を開きます。
Series Name |
EM-30 |
EM-36 |
EM-20 |
EM-26 |
Compliance |
JEDEC e.MMC 5.1 |
JEDEC e.MMC 5.0 |
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Interface Data Transfer Mode |
e.MMC 1-bit, 4-bit, 8-bit up to HS400 |
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Package |
153-ball BGA, 0.5mm pitch |
153-ball BGA, 0.5mm pitch |
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Max Outline Dimensions |
11.5 x 13 x 1.2 mm 14.0 x 18 x 1.4 mm |
11.5 x 13.0 x 1.0 mm |
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Flash Type |
3D TLC |
3D pSLC / enhanced mode |
MLC |
pSLC / enhanced mode |
Density Range |
4-256 GB |
5-80 GB |
4-64 GB |
2-32 GB |
Data Retention |
10 years @ life begin |
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Endurance |
3k @ TLC mode |
3k @ MLC mode |
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Operating Temperature |
Industrial: -40°C to +85°C |
Industrial: -40°C to +85°C |
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Storage Temperature |
-40°C to +85°C |
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Performance Sequential Read (MB/s) |
up to 320 up to 240 up to 4,600 up to 2,900 |
up to 330 up to 250 up to 4,500 up to 2,900 |
up to 175 |
up to 240 up to 120 up to 6,700 up to 6,700 |
Voltage |
VCCQ: 1.70-1.95V / 2.70-3.60V ; VCC: 2.70-3.60 |
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Features & Tools |
High performance up to HS400 mode |
High performance up to HS400 mode Detailed block erase counter data via the Extended CSD Register |
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).
EN-20 は、DRAM をサポートする PCIe 3.1/NVMe 1.3 製品であり、最大 4 レーンの動作モードにより、最新の用途に高パフォーマンスと短いレイテンシの両方を提供します。バックグラウンド適応型の読取りリフレッシュとメディアスキャンによるデータケアマネジメントにより、フラッシュブロックのリテンションが維持され、書込みの少ない用途でも製品の使用期間が長くなります。
E2000とE2600は、新しい高密度NANDフラッシュを搭載した最新のアップグレードです。
高寿命が必要な場合、3D NAND pSLC 搭載の EN-26 は、EN-20 と比較して寿命が 10 倍長くなります。
Series Name |
EN-20 / E2000 |
EN-26 / E2600 |
Interface Data Transfer Mode |
PCIe Gen 3.1, 4 PCIe lanes |
|
Package |
BGA 391 ball, 0.8mm pitch |
|
Outline Dimensions |
16mm x 20mm x 1.8mm |
|
Flash Type |
3D NAND TLC |
3D NAND pSLC |
Density Range |
15-480 GB | 5-160 GB |
Data Retention |
10 years @ life begin |
|
Endurance [DWPD] |
up to 1.8 / 2.2 |
up to 54 / 79 |
Operating Temperature |
-40°C to +85°C (up to 95°C TCase) |
|
Storage Temperature |
-40°C to +85°C |
|
Performance Sequential Read (MB/s) |
up to 1,775 / 1,750 up to 750 / 865 up to 140,000 / 140,000 up to 112,000 / 134,000 |
up to 1,780 / 1,780 up to 758 / 870 up to 140,000 / 89,000 up to 136,000 / 136,000 |
MTBF |
~3,000,000 hours |
|
Voltages |
3.3V ±5%, 1.8V ±5%, 0.9V ±5% | |
Features & Tools |
HMB support |
Various effects like data retention, read disturb limits, or temperature can impact data reliability. The latest generation of Swissbit products use special methods to maintain and refresh the data for higher data integrity.
The Swissbit Life Time Monitoring feature enables users to access the memory device’s detailed Life Time Status and allows prediction of imminent failure, avoiding unexpected data loss. This feature uses an extended S.M.A.R.T. (Self-Monitoring, Analysis and Reporting Technology) interface or vendor-specific commands to retrieve the Flash product information.
Intelligent Power Fail Protection and Recovery protects data from unexpected power loss. During an unintentional shutdown, firmware routines and an intelligent hardware architecture ensure that all system and user data will be stored to the NAND.
Products with the Swissbit powersafe feature use reliable tantalum capacitors to store energy so that in case of a sudden power fail the charge will be used to harden the cache content into the NAND flash.
This feature uses an uninterruptable sequence of data erase commands. Even a power off can’t stop the process, which will continue upon restoration of power. The optional enhanced feature allows the customer to sanitize the data according to different standards like DoD, NSA, IREC, etc. The purge algorithm can be started by a software command or through a hardware pin.
The sensor allows the host hardware or software to monitor the memory device temperature to improve data reliability in the target application environment.
The TRIM command allows the operating system to inform the SSD which blocks of data are no longer considered in use and can be wiped out internally, which increases system performance in following write accesses. With TRIM Support data scrap can be deleted in advance, which otherwise would slow down future write operations to the involved blocks.
The WAF (write amplification factor) for MLC-based products is reduced by combining a paged based FW block management with a powerful card architecture and configuration settings.
Sophisticated Wear Leveling and Bad Block Management ensure that Flash cells are sparingly and equally used in order to prolong life time of the device.
Swissbit‘s embedded memory and storage solutions are designed and approved for reliable operation over a wide temperature range. The products are verified at temperature corners and prestressed with a burn-in operating functional test (Test During Burn In – TDBI).